Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Steven C. Witczak"'
Autor:
Steven C. Witczak, Ronald D. Schrimpf, Daniel M. Fleetwood, Scott R. Messenger, Michael S. Langlois, Michael W. McCurdy, John A. Rodriguez
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bd000c323073296ab8b8d155ba005e6
https://doi.org/10.1109/tns.2023.3252811
https://doi.org/10.1109/tns.2023.3252811
Autor:
Harold. P. Hjalmarson, Steven C. Witczak, Samuel Z. Roark, Renee Van Ginhoven, Thomas Buchheit, Hugh Barnaby, Philippe Adell
Publikováno v:
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e7d44a333754ea2b38834997ec4eb13
https://doi.org/10.1109/radecs53308.2021.9954578
https://doi.org/10.1109/radecs53308.2021.9954578
Autor:
M. Codie Mishler, Daniel M. Fleetwood, Michael S. Langlois, Ronald D. Schrimpf, Dennis A. Adams, Scott R. Messenger, Steven C. Witczak
Publikováno v:
IEEE Transactions on Nuclear Science. 66:795-800
Irradiation of 2N5339 n-p-n bipolar junction transistors (BJTs) with either 250-MeV protons or 10-keV X-rays shifts the input characteristics to lower values of $V_{\mathrm {BE}}$ while degrading the current gain and drive current. The degradation is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db1774cc4f8cd33da9ba90826a3a6f1d
https://doi.org/10.1109/tns.2019.2904911
https://doi.org/10.1109/tns.2019.2904911
Autor:
Steven C. Witczak, Jeremiah J. Horner, James S. Hack, Norman P. Goldstein, Paul V. Dudek, Brainton U. Song, Scott R. Messenger, Glen E. Macejik, Thomas J. Knight
Publikováno v:
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a08a2a456edf96d56da909595459a59
https://doi.org/10.1109/radecs50773.2020.9857696
https://doi.org/10.1109/radecs50773.2020.9857696
Autor:
Eric V. Williamson, David L. Jarvis, Glen E. Macejik, Kristin Marino, Steven C. Witczak, Matthew J. Calderone
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The Northrop Grumman 4530 Parallel-to-Serial Driver and 4527 Registered Receiver align and convert 12-bit parallel data to single-ended serial streams. The devices were evaluated for functionality and shifts in logic levels, operating voltages, input
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3807cb310f0b5b8aa1806f03c8a6578a
https://doi.org/10.1109/radecs.2017.8696130
https://doi.org/10.1109/radecs.2017.8696130
Autor:
David C. Harms, Jeremiah J. Horner, Steven C. Witczak, Todd S. Mason, Glen E. Macejik, Kristin Marino
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
The Northrop Grumman 4558 Analog Processor / Analog-to-Digital Converter was evaluated for tolerance to ionizing radiation at moderate doses. Radiation-induced shifts in non-linearity, noise, gain, offset and power dissipation are inferred from the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72462a944b2da581a9c98ddfc480e74f
https://doi.org/10.1109/nsrec.2017.8115442
https://doi.org/10.1109/nsrec.2017.8115442
Autor:
M. D. Looper, Philip J. Kuekes, E.E. King, R. Stanley Williams, Steven C. Witczak, Jianhua Yang, Jon V. Osborn, Erica DeIonno, William M. Tong, Duncan Stewart
Publikováno v:
IEEE Transactions on Nuclear Science. 57:1640-1643
Semiconducting TiO2 displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2 devices in the on and off resistance states to 45 Mrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::783af656874b9d905c6e47c30a3263cd
https://doi.org/10.1109/tns.2010.2045768
https://doi.org/10.1109/tns.2010.2045768
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2602-2608
Radiation-induced edge-leakage current in minimum geometry n-channel MOSFETs from five submicron technologies is examined as a function of dose rate. Under worst-case bias, degradation of transistors from the TSMC 0.35-, 0.25-, and 0.18-/spl mu/m pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3386fff9fbb9d22eb6bae800a526021e
https://doi.org/10.1109/tns.2005.860709
https://doi.org/10.1109/tns.2005.860709
Autor:
Steven C. Witczak, William L. Warren, P.S. Winokur, T.L. Meisenheimer, M.J. Johnson, Daniel M. Fleetwood
Publikováno v:
IEEE Transactions on Nuclear Science. 44:1810-1817
A large, delayed increase is observed in the postirradiation 1/f noise of Oki pMOS transistors prior to the onset of latent interface-trap buildup. Both effects are evidently due to similar thermally activated processes involving hydrogen. The increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb3bcd694b8f0ebee501353d5ea75c22
https://doi.org/10.1109/23.658947
https://doi.org/10.1109/23.658947
Publikováno v:
Journal of Applied Physics. 87:8206-8208
An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21048ec19a236e1dff79742610f25edb
https://doi.org/10.1063/1.373522
https://doi.org/10.1063/1.373522