Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Steven A Maranowski"'
Autor:
Steven A. Maranowski, P. N. Grillot, Changhua Chen, A. J. Moll, Herman C Chui, T. D. Osentowski, B. W. Liang, J.-W. Huang, M. J. Peanasky, S. A. Stockman, C. P. Kuo
Publikováno v:
Journal of Electronic Materials. 28:916-925
Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::760c11f732a369fc6ce07c1dca943f09
https://doi.org/10.1007/s11664-999-0220-x
https://doi.org/10.1007/s11664-999-0220-x
Autor:
S. J. Caracci, K. C. Hsieh, C. P. Kuo, A. R. Sugg, M. G. Craford, Frederick A. Kish, J. E. Baker, John Dallesasse, Nick Holonyak, Steven A Maranowski, T. D. Osentowski, Robert M Fletcher
Publikováno v:
Journal of Electronic Materials. 21:1133-1139
Data are presented demonstrating the formation of native oxides from high Al composition In0.5(AlxGa1-x)0.5P (x≳ 0.9) by simple annealing in a “wet” ambient. The oxidation occurs by reaction of the high Al composition crystal with H2O vapor (in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12644482412598b43f77459c783475e
https://doi.org/10.1007/bf02667606
https://doi.org/10.1007/bf02667606
Autor:
C. P. Kuo, S. J. Caracci, M. G. Craford, F. A. Kish, Nick Holonyak, K. C. Hsieh, Steven A Maranowski, Robert M Fletcher, T. D. Osentowski
Publikováno v:
Journal of Applied Physics. 71:2521-2525
Data are presented demonstrating the continuous (cw) room‐temperature (23 °C) operation of planar index‐guided ‘‘buried‐mesa’’ AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5Ga0.5P heterostructure visible‐spectrum laser diodes. The pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084b792ea84b0fecde9b12fee258885f
https://doi.org/10.1063/1.351067
https://doi.org/10.1063/1.351067
Publikováno v:
Applied Physics Letters. 69:2882-2884
Data are presented demonstrating double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure lasers. The buried oxide laser structures are defined, in current and cavi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00544f21e1844693204fc9265912003e
https://doi.org/10.1063/1.117350
https://doi.org/10.1063/1.117350
Publikováno v:
Applied Physics Letters. 67:3168-3170
Data are presented demonstrating edge‐emitting laser diode operation of AlyGa1−yAs– GaAs–InxGa1−xAs quantum well heterostructures modified by the formation of a buried native‐oxide distributed Bragg reflecting (DBR) mirror adding vertical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eed37d6f51ee4b18653b12e52ec075b
https://doi.org/10.1063/1.115151
https://doi.org/10.1063/1.115151
Autor:
E. I. Chen, Russell D. Dupuis, M.R. Islam, M. J. Ries, Steven A Maranowski, Nick Holonyak, Archie L. Holmes
Publikováno v:
Applied Physics Letters. 67:1107-1109
Data are presented on the 300 K photopumped (pulsed) laser operation of a visible‐spectrum (λ=650 nm) AlAs–AlGaAs/InAlP–InGaP quantum‐well heterostructure (QWH) crystal that utilizes high‐index‐contrast AlAs‐native‐oxide/Al0.6Ga0.4As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b6380a34de2417bf6450aa54810273c
https://doi.org/10.1063/1.114976
https://doi.org/10.1063/1.114976
Autor:
R. V. Chelakara, F. J. Ciuba, M.R. Islam, Nick Holonyak, Russell D. Dupuis, E. I. Chen, Steven A Maranowski, M. J. Ries, Archie L. Holmes
Publikováno v:
Applied Physics Letters. 66:2831-2833
The growth and fabrication of high‐quality vertical distributed Bragg reflectors (DBRs) utilizing layers of InAlP and the AlAs native oxide are reported. The III–V epitaxial structures employed in this work consist of alternating layers of InAlP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23201940317ab2c713b113571bb0e749
https://doi.org/10.1063/1.113444
https://doi.org/10.1063/1.113444
Autor:
M. J. Ries, P. A. Grudowski, E. I. Chen, T. A. Richard, Nick Holonyak, Russell D. Dupuis, J. G. Neff, Steven A Maranowski
Publikováno v:
Applied Physics Letters. 66:589-591
Data (300 and 77 K) are presented on the photopumped laser operation of AlxGa1−xAs–GaAs vertical cavity quantum well heterostructure crystals that exhibit enhanced hot‐carrier recombination. The mirrors defining the vertical cavity are formed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f2294e97a60f18d7c4489b5854f8bec
https://doi.org/10.1063/1.114022
https://doi.org/10.1063/1.114022
Publikováno v:
Applied Physics Letters. 65:740-742
Data are presented on the 300‐K continuous and pulsed photopumped laser operation of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructure (QWH) crystals that utilize large‐index‐step high‐contrast distributed Bragg reflector mirr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995da1406f817ae9117f05444a3ee895
https://doi.org/10.1063/1.112216
https://doi.org/10.1063/1.112216
Publikováno v:
Applied Physics Letters. 64:2151-2153
Data are presented demonstrating improved laser operation of AlxGa1−xAs‐GaAs‐InyGa1−yAs quantum well heterostructures modified with buried native oxide current‐blocking windows. The windows are formed by low temperature (425 °C) anisotropi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc7e100582552a3f6394efefc4d3d466
https://doi.org/10.1063/1.111660
https://doi.org/10.1063/1.111660