Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Steven A Hartz"'
Autor:
Kan Xie, Steven A Hartz, Virginia M Ayres, Benjamin W Jacobs, Reginald M Ronningen, Albert F Zeller, Thomas Baumann, Mary Anne Tupta
Publikováno v:
Materials Research Express, Vol 2, Iss 1, p 015003 (2014)
A mathematical stability approach that enables the evaluation of the mulitvariate thermionic field emission parameters at Schottky barriers is presented. The method is general, requiring only the effective mass and relative dielectric constant for a
Externí odkaz:
https://doaj.org/article/ba2e8c8909ee418b9c0a0a290c82f927
Publikováno v:
MRS Proceedings. 1785:19-25
The high carrier concentrations typically reported for nanowire devices indicate that when Schottky barrier transport is present, it occurs in the thermionic field emission regime with a substantial but not exclusive tunneling component. Analysis by
Autor:
Volkan Mujdat Tiryaki, Virginia M. Ayres, Ijaz Ahmed, Usienemfon Adia-Nimuwa, Kan Xie, Steven Allen Hartz, David I. Shreiber
Publikováno v:
MRS Proceedings. 1527
A new three-dimensional cell shape index using the AFM height images of cells cultured on cell substrates was defined. The new cell shape index revealed quantitative cell spreading information of cells that is not included in the conventional cell sh
Autor:
Thomas Baumann, Zhun Liu, R. M. Ronningen, Mary Anne Tupta, Benjamin W. Jacobs, Kan Xie, A.F. Zeller, Virginia M. Ayres, Steven Allen Hartz
Publikováno v:
MRS Proceedings. 1512
The real-time electronic performance of a gallium nitride nanowire-based field effect transistor was investigated at five-minute intervals over thirty minutes of continuous irradiation by Xenon-124 relativistic heavy ions. An initial current surge th
Autor:
Virginia M. Ayres, Mary Anne Tupta, Kan Xie, A.F. Zeller, Thomas Baumann, R. M. Ronningen, Steven Allen Hartz, Benjamin W. Jacobs
Publikováno v:
Materials Research Express. 2:015003
A mathematical stability approach that enables the evaluation of the mulitvariate thermionic field emission parameters at Schottky barriers is presented. The method is general, requiring only the effective mass and relative dielectric constant for a