Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Steven, Flynn"'
Autor:
Aritra Sil, Michael J. Deck, Elise A. Goldfine, Chi Zhang, Sawankumar V. Patel, Steven Flynn, Haoyu Liu, Po-Hsiu Chien, Kenneth R. Poeppelmeier, Vinayak P. Dravid, Michael J. Bedzyk, Julia E. Medvedeva, Yan-Yan Hu, Antonio Facchetti, Tobin J. Marks
Publikováno v:
Chemistry of Materials. 34:3253-3266
Autor:
Chris Wolverton, Steven Flynn, Kenneth R. Poeppelmeier, Chi Zhang, Jiahong Shen, Kent J. Griffith, Vinayak P. Dravid
Publikováno v:
Inorganic Chemistry. 60:4463-4474
Fluoridation of HfO2 was carried out with three commonly used solid-state fluoridation agents: PVDF, PTFE, and NH4HF2. Clear and reproducible differences are observed in the reaction products of the fluoropolymer reagents and NH4HF2 with the latter m
Autor:
Steven Flynn, R.
Publikováno v:
Management Research Review, 2010, Vol. 33, Issue 3, pp. 269-277.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/01409171011030417
Autor:
Matthew L. Nisbet, Weiguo Zhang, Kent J. Griffith, Kenneth R. Poeppelmeier, Sossina M. Haile, Steven Flynn, Sheel Sanghvi, P. Shiv Halasyamani
Publikováno v:
Chemistry of Materials. 32:4785-4794
Single crystals of LiIn2SbO6 have been synthesized using a Li2MoO4 flux and characterized with X-ray diffraction. The compound crystallizes in a new structure-type with a rutile-related framework. ...
Autor:
Christopher Jeans, Steven Flynn
Publikováno v:
Football and the Law ISBN: 9781526521811
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8d0519f7f51c4380088694dcad95cd
https://doi.org/10.5040/9781526521842.ch-007
https://doi.org/10.5040/9781526521842.ch-007
Autor:
Saeed Saeed, Kenneth R. Poeppelmeier, Vinayak P. Dravid, Chi Zhang, A. J. Adekoya, G. B. Gonzalez, Steven Flynn
Publikováno v:
Inorganic Chemistry. 58:15610-15617
The anion-deficient fluorite-related family of materials exhibits a number of commercially useful properties arising from the specific arrangement of anion vacancies in each structure. One recently reported member, Zn0.456In1.084Ge0.46O3, is the only
Indium and bismuth are technologically important elements, in particular as oxides for optoelectronic applications. 115In and 209Bi are both I = 9/2 nuclei with high natural abundances and moderately high frequencies but large nuclear electric quadru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07366c9e58ed42908a732ef553bf6ca8
https://doi.org/10.26434/chemrxiv.14668503
https://doi.org/10.26434/chemrxiv.14668503
Publikováno v:
Magnetic resonance in chemistry : MRCREFERENCES. 59(9-10)
Indium and bismuth are technologically important elements, in particular as oxides for optoelectronic applications.
Publikováno v:
Microscopy and Microanalysis. 26:744-746