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Autor:
Tomoharu Fujiwara, Haiping Zhang, Hiroshi Kato, Irfan Malik, Christine Pelissier, Kenichi Shiraishi, Yasuhiro Iriuchijima, Prasad Terala, Soichi Owa, Steve Woodman, Katsushi Nakano
Publikováno v:
SPIE Proceedings.
ArF immersion lithography has become accepted as the critical layer patterning solution for lithography going forward. Volume production of 55 nm devices using immersion lithography has begun. One of the key issues for the success of volume productio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87bd84adbaf8ca9f9dbe4b2d83ae26e0
https://doi.org/10.1117/12.711464
https://doi.org/10.1117/12.711464
