Zobrazeno 1 - 10
of 227
pro vyhledávání: '"Steve S. Chung"'
Autor:
E Ray Hsieh, Meng-Ru Jiang, Jian-Li Lin, Steve S. Chung, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 866-874 (2018)
In this paper, we have developed a methodology of a lateral profiling technique of the channel local temperature in 14 nm FinFET, incurred by the self-heating effect (SHE). As SHE happens, the thermal source generated near the drain will dissipate to
Externí odkaz:
https://doaj.org/article/64481be2930c40ca992e5936bae7f4b7
Autor:
Steve S. Chung
Publikováno v:
Therapeutic Advances in Neurological Disorders, Vol 8 (2015)
Topiramate has been widely utilized worldwide as an effective medication against partial- and generalized-onset seizures. Extended-release topiramate was developed to provide patients with the convenience of once-daily dosing and potentially improved
Externí odkaz:
https://doaj.org/article/154cba90e01e45379b7f0ce82076103a
Autor:
Steve S. Chung
Publikováno v:
Therapeutic Advances in Neurological Disorders, Vol 3 (2010)
More than 30% of epilepsy patients remain refractory despite the advent of new antiepileptic drugs (AEDs) over two decades. Although a small percentage of these refractory patients may become seizure free when a new AED is added, combined administrat
Externí odkaz:
https://doaj.org/article/015a0dd598b144d59cee0974d348ed03
Publikováno v:
Neurology International, Vol 1, Iss 1, Pp e6-e6 (2009)
Older individuals may be more susceptible to cognitive side effects of antiepileptic drugs than are younger adults. This randomized, double-blind study compared the cognitive effects of lamotrigine (median maintenance dosage, 500.0 mg/d) and topirama
Externí odkaz:
https://doaj.org/article/b0ed131cd9f24f2da295d26aeec4fa12
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3919eaea092c37546e1f3a5a072c96e
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134139
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134139
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d1bd39cad4afce379f3b4578563ce0
https://doi.org/10.1109/irps48203.2023.10117748
https://doi.org/10.1109/irps48203.2023.10117748
Autor:
Steve S. Chung
Publikováno v:
Applied Physics A. 129
In the history of metal–oxide–semiconductor field effect transistor (MOSFET), the quality of its gate oxide has been a cornerstone of the present semiconductor integrated circuits. The changes of gate dielectrics from conventional SiO2 gate oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b81356a4a298a6799bf6fe33491d540
https://doi.org/10.1007/s00339-023-06383-w
https://doi.org/10.1007/s00339-023-06383-w
Publikováno v:
IEEE Transactions on Electron Devices. 68:2699-2704
We present a nonvolatile resistive-gate metal–oxide–semiconductor-field-effect transistor (RG-MOSFET). An RG-MOSFET comprises a MOSFET and dielectric layers sandwiched between the top and bottom electrode metal–dielectric–metal (MDM). The gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b35188fe31f62b67a1334c617dfb6f0
https://doi.org/10.1109/ted.2021.3074354
https://doi.org/10.1109/ted.2021.3074354
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb2b4bf64733072256eedb9dcb3d941
https://doi.org/10.1109/snw56633.2022.9889071
https://doi.org/10.1109/snw56633.2022.9889071
Publikováno v:
Journal of Data Science. 17:593-612
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26948f4f1ccf14f2af7145f08c561bb6
https://doi.org/10.6339/jds.201907_17(3).0008
https://doi.org/10.6339/jds.201907_17(3).0008