Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Steve Rossnagel"'
Autor:
M. Guillorn, Deqiang Wang, Steve Rossnagel, Lynne Gignac, Qinghuang Lin, Sung-Wook Nam, Ajay K. Royyuru, Robert L. Bruce, Gustavo Stolovitzky, P. J. Litwinowicz, Armand Galan, Dirk Pfeiffer, Evan G. Colgan, Ronald D. Goldblatt, S. Papa Rao, J.J. Bucchignano, Markus Brink, Michael F. Lofaro, Chao Wang, W. H. Advocate, Elizabeth A. Duch, E. Kratschmer, C. M. Breslin, John M. Cotte, William Henry Price, Christopher V. Jahnes, Stas Polonsky, Hongbo Peng, Eric A. Joseph
Publikováno v:
2013 IEEE International Electron Devices Meeting.
We report sub-20 nm sacrificial nanochannels that enable stretching and translocating single DNA molecules. Sacrificial silicon nano-structures were etched with XeF2 to form nanochannels. Translocations of linearized DNA single molecules were imaged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7009e4a7a92742f8a8752e24815c32d7
https://doi.org/10.1109/iedm.2013.6724627
https://doi.org/10.1109/iedm.2013.6724627
Autor:
Binquan Luan, Hongbo Peng, Glenn J. Martyna, Steve Rossnagel, Stas Polonsky, Gustavo Stolovitzky
Publikováno v:
Physical review letters. 104(23)
The benefits of low-cost, high-throughput human genome sequencing to medical science has inspired recent experimental work focused on DNA translocation through solid-state nanopores. Given that microelectronic fabrication methods permit the integrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60472344668e8cf0af5530ab5eb66a5c
https://pubmed.ncbi.nlm.nih.gov/20867275
https://pubmed.ncbi.nlm.nih.gov/20867275
Autor:
Cyril Cabral, Christian Lavoie, Lia Krusin-Elbaum, Jonathan Z. Sun, Steve Rossnagel, Kuan-Neng Chen
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
In addition to the huge resistivity changes, the phase-change switching process is accompanied by a significant volume change (Pedersen et al., 2001), which in turn can result in large stresses. This can become a serious reliability issue, particular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e93221af76d67b3b93f5c08c88bb446
https://doi.org/10.1109/.2006.1629511
https://doi.org/10.1109/.2006.1629511
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Despite many projections on the inevitable post-PVD evolution of interconnect technology, it remains PVD-based for liner-seed through 45 nm and perhaps farther, with an ALD process change the obvious next step perhaps followed by a switch from Ta to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da741937010509f1b781e08d7cc3d7da
https://doi.org/10.1109/iedm.2005.1609274
https://doi.org/10.1109/iedm.2005.1609274
Autor:
Steve Rossnagel, Christian Lavoie, Zhen Zhang, Ahmet S. Ozcan, Bin Yang, Shi-Li Zhang, Andrew J. Kellock, Simon Gaudet, Conal Murray, Patrick Desjardins, Jean Jordan-Sweet, Yu Zhu
Publikováno v:
Applied Physics Letters. 97:252108
This letter reports on a process scheme to obtain highly reproducible Ni1−xPtx silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8108973d9b1ef962b6831df8e8b47d16
https://doi.org/10.1063/1.3529459
https://doi.org/10.1063/1.3529459
Publikováno v:
Applied Physics Letters. 91:153103
We present the concept of a nanoelectromechanical device capable of controlling the position of DNA inside a nanopore with a single nucleotide accuracy. The device utilizes the interaction of discrete charges along the backbone of a DNA molecule with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc5ad0f9f403f5c12ccf1e22def6b55
https://doi.org/10.1063/1.2798247
https://doi.org/10.1063/1.2798247
Autor:
Lia Krusin-Elbaum, Matthew Copel, Steve Rossnagel, Vaughn R. Deline, Kuan-Neng Chen, Cyril Cabral, Kathleen B. Reuter, David W. Abraham, John Bruley
Publikováno v:
Applied Physics Letters. 90:141902
The authors present direct evidence for Te segregation to the grain boundaries in chalcogenide Ge2Sb2Te5 films by using transmission electron microscopy scans with a 0.5nm diameter focused probe. This finding is consistent with the observed impeded g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2985149c71fe6828c87bbfbc70b01b67
https://doi.org/10.1063/1.2719148
https://doi.org/10.1063/1.2719148