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pro vyhledávání: '"Steve Puntigan"'
Autor:
L. He, Jiayu Chen, Faxian Xiu, Steve Puntigan, Hadis Morkoç, B. Pattada, K. S. Ramaiah, Qiaoying Zhou, M. O. Manasreh
Publikováno v:
Journal of Applied Physics. 93:10140-10142
Intersubband transitions in Si-doped molecular beam epitaxy grown GaN/AlGaN multiple quantum wells on c-plane sapphire were investigated using the Fourier-transform infrared optical absorption technique. Several GaN quantum well samples were grown wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::452cb269cf5e49b02b0ea772935fcfcc
https://doi.org/10.1063/1.1577809
https://doi.org/10.1063/1.1577809
