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pro vyhledávání: '"Steve Perelli"'
Autor:
Steve Perelli, Haian Lin, David Jauregui, Jacek Korec, Shuming Xu, Juan Alejandro Herbsommer, Charles Walter Pearce, Keith Barry, Christopher Boguslaw Kocon, Ozzie Lopez, Gary Eugene Daum, Simon Molly
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
A new generation of Power MOSFET technology has been introduced. The devices are manufactured in a standard 0.35µm CMOS production line with only few process modules being adapted for the requirements of vertical power transistors with a 2x improvem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3952305361e92ede7c1454d19e04cba
https://doi.org/10.1109/iedm.2009.5424400
https://doi.org/10.1109/iedm.2009.5424400
