Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Steve McGarvey"'
Autor:
Steve McGarvey, Scott Wolfe
Publikováno v:
SPIE Proceedings.
With the integration of high speed Scanning Electron Microscope (SEM) based Automated Defect Redetection (ADR) in both high volume semiconductor manufacturing and Research and Development (R and D), the need for reliable SEM Automated Defect Classifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76ef0a1914455d777f05f9534652f0c2
https://doi.org/10.1117/12.2258122
https://doi.org/10.1117/12.2258122
Publikováno v:
SPIE Proceedings.
This study explores the feasibility of Automated Defect Classification (ADC) with a Surface Scanning Inspection System (SSIS). The defect classification was based upon scattering sensitivity sizing curves created via modeling of the Bidirectional Ref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7fcd5a1395b1ac17a4a2b9d2a2b3f40
https://doi.org/10.1117/12.2222306
https://doi.org/10.1117/12.2222306
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
The continual increasing demands upon Plasma Etching systems to self-clean and continue Plasma Etching with minimal downtime allows for the examination of SiCN, SiO2 and SiN defectivity based upon Surface Scanning Inspection Systems (SSIS) wafer scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f7bf5e3ded4d2be8f7162a0fb554355
https://doi.org/10.1117/12.2057401
https://doi.org/10.1117/12.2057401
Publikováno v:
SPIE Proceedings.
Physical vapor deposition (PVD) aluminum films present unique challenges when detecting particulate defects with a Surface Scanning Inspection System (SSIS). Aluminum (Al) films 4500A thick were deposited on 300mm particle grade bare Si wafers at two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7c9a17d6c66edaf356b3a9cb5dd6b92
https://doi.org/10.1117/12.916540
https://doi.org/10.1117/12.916540
Autor:
Steve McGarvey, Anne E. Miller
Publikováno v:
SPIE Proceedings.
The methodology of Surface Scanning Inspection System (SSIS) for the Chemical Mechanical Polish (CMP) Process is to inspect the wafers on a SSIS and then subsequently perform a Defect Review SEM (DRS) review of the detected surface and subsurface ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eefb3c07ef4780f193cd67036be39a20
https://doi.org/10.1117/12.881105
https://doi.org/10.1117/12.881105
Publikováno v:
SPIE Proceedings.
Measuring coating defects on two or more blanket film layers is difficult and can be misleading due to reflectivity changes from the bottom layer, and surface roughness not present when the substrate is only polished silicon. To improve signal-to-noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4540de7e43264d73c44e40cad45a2bf3
https://doi.org/10.1117/12.846690
https://doi.org/10.1117/12.846690
Publikováno v:
SPIE Proceedings.
Given the current manufacturing technology roadmap and the competitiveness of the global semiconductor manufacturing environment in conjunction with the semiconductor manufacturing market dynamics, the market place continues to demand a reduced die m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e8611be2b5c931bad9af3d3278d54b9
https://doi.org/10.1117/12.846700
https://doi.org/10.1117/12.846700
Autor:
Masakazu Kanezawa, Steve McGarvey
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
One of the few remaining bastions of non-regulated Integrated Circuit defectivity is the wafer bevel. Recent internal Integrated Circuit Manufacturing studies have suggested that the edge bevel may be responsible for as much as a two to three percent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d04441352e66bb2bcb1076d9a433064
https://doi.org/10.1117/12.814235
https://doi.org/10.1117/12.814235
Autor:
Steve McGarvey, David John Ruprecht
Publikováno v:
SPIE Proceedings.
As the Integrated Circuit manufacturing market has begun a concerted effort toward the mass production of 45nm node material, the emergence of inaccurate defect sizing and subsequent mis-identification of surface and subsurface defects from Surface S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76c80fa903e1379d0e81480450ee63c6
https://doi.org/10.1117/12.796645
https://doi.org/10.1117/12.796645