Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Steve M. Cox"'
Autor:
Nagarajan Jayaraju, Venkatram Venkatasamy, Steve M. Cox, Uwe Happek, Chandru Thambidurai, John L. Stickney
Publikováno v:
Journal of Applied Electrochemistry. 36:1223-1229
This paper concerns optimization studies of the growth of cadmium telluride, an important II–VI compound semiconductor, using electrochemical atomic layer epitaxy (EC-ALE). The importance of the potentials used to deposit atomic layers of Cd and Te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de108dbea196c2ef132536e8a9650c7a
https://doi.org/10.1007/s10800-006-9182-3
https://doi.org/10.1007/s10800-006-9182-3
Publikováno v:
Food Hydrocolloids. 18:429-439
Mixes of κ-carrageenan and β-lactoglobulin were observed by atomic force microscopy (AFM). Diluted κ-carrageenan solutions showed helix formation and strand heights between 1 and 3 nm. Upon mixing β-lactoglobulin with carrageenan, AFM still revea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9173506edb0d7ec0f199700231cc8462
https://doi.org/10.1016/j.foodhyd.2003.08.001
https://doi.org/10.1016/j.foodhyd.2003.08.001
Autor:
Raman Vaidyanathan, John L. Stickney, Uwe Happek, Mkhulu Mathe, Steve M. Cox, Patrick Sprinkle
Publikováno v:
MRS Proceedings. 744
Electrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4ae141a7415412d2f280f72895fd9b
https://doi.org/10.1557/proc-744-m5.34
https://doi.org/10.1557/proc-744-m5.34
Autor:
Nagarajan Jayaraju, Chandru Thambidurai, Steve M. Cox, Venkatram Venkatasamy, John L. Stickney
Publikováno v:
Journal of The Electrochemical Society. 154:H720
Films of Hg (1-x) Cd x Te (MCT) were grown using electrochemical atomic layer deposition, the electrochemical analog of atomic layer epitaxy, and atomic layer deposition (ALD). The present study describes the growth of MCT via electrochemical ALD, us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b0119255eedf9a344a64b4549e841a
https://doi.org/10.1149/1.2745677
https://doi.org/10.1149/1.2745677
Publikováno v:
Journal of The Electrochemical Society. 152:C751
The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the formation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26377e24f39b89d851bffdecbce0892e
https://doi.org/10.1149/1.2047547
https://doi.org/10.1149/1.2047547