Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Steve Kilgore"'
Autor:
Steve Kilgore
Publikováno v:
MRS Proceedings. 1792
Process-induced defects in electroplated Au interconnect metallization on GaAs devices were detected during the course of reliability testing. Abnormally high lognormal sigma values (σ > 0.7) indicated the existence of a bi-modal failure mechanism.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a6b085848c4159e9b92e0e879e60bf6
https://doi.org/10.1557/opl.2015.472
https://doi.org/10.1557/opl.2015.472
Publikováno v:
ECS Meeting Abstracts. :1221-1221
The gallium nitride (GaN) semiconductor market continues to rapidly expand because GaN device technology offers considerable performance advantages compared to gallium arsenide (GaAs) and silicon (Si) devices. GaN has inherently higher breakdown fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b661622bd4ecb25d4c5a2439be63191
https://doi.org/10.1149/ma2016-01/24/1221
https://doi.org/10.1149/ma2016-01/24/1221
Autor:
Steve Kilgore
Publikováno v:
ECS Meeting Abstracts. :1431-1431
Compound semiconductor devices are in mass volume production yet our understanding of reliability and defectivity of III-V materials is still evolving. Process-induced defects in electroplated Au interconnect metallization on GaAs devices were detect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f87346884162631a034f6ec98f025d61
https://doi.org/10.1149/ma2015-01/22/1431
https://doi.org/10.1149/ma2015-01/22/1431
Publikováno v:
MRS Proceedings. 863
Electromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm2 with ambient temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f391aaf59dca6b84c4fff251167cc54
https://doi.org/10.1557/proc-863-b8.30
https://doi.org/10.1557/proc-863-b8.30
Autor:
Steve Kilgore
Publikováno v:
ECS Meeting Abstracts. :1648-1648
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e43f280af209cc9f85b83e07abdb1fb
https://doi.org/10.1149/ma2014-01/43/1648
https://doi.org/10.1149/ma2014-01/43/1648
Autor:
Steve Kilgore, Dieter Schroder
Publikováno v:
ECS Meeting Abstracts. :10-10
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ad055eaa002c3d21b487e9db6422906
https://doi.org/10.1149/ma2010-01/1/10
https://doi.org/10.1149/ma2010-01/1/10