Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Steve K, Volkman"'
Autor:
Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin
Publikováno v:
Nature, vol 604, iss 7904
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental changein the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4fe30529e321261100d5a1d53aa55c9
https://doi.org/10.1038/s41586-022-04425-6
https://doi.org/10.1038/s41586-022-04425-6
Autor:
Suraj S, Cheema, Nirmaan, Shanker, Li-Chen, Wang, Cheng-Hsiang, Hsu, Shang-Lin, Hsu, Yu-Hung, Liao, Matthew, San Jose, Jorge, Gomez, Wriddhi, Chakraborty, Wenshen, Li, Jong-Ho, Bae, Steve K, Volkman, Daewoong, Kwon, Yoonsoo, Rho, Gianni, Pinelli, Ravi, Rastogi, Dominick, Pipitone, Corey, Stull, Matthew, Cook, Brian, Tyrrell, Vladimir A, Stoica, Zhan, Zhang, John W, Freeland, Christopher J, Tassone, Apurva, Mehta, Ghazal, Saheli, David, Thompson, Dong Ik, Suh, Won-Tae, Koo, Kab-Jin, Nam, Dong Jin, Jung, Woo-Bin, Song, Chung-Hsun, Lin, Seunggeol, Nam, Jinseong, Heo, Narendra, Parihar, Costas P, Grigoropoulos, Padraic, Shafer, Patrick, Fay, Ramamoorthy, Ramesh, Souvik, Mahapatra, Jim, Ciston, Suman, Datta, Mohamed, Mohamed, Chenming, Hu, Sayeef, Salahuddin
Publikováno v:
Nature. 604(7904)
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::77332fdd50103bf7aa4204de78c57539
https://pubmed.ncbi.nlm.nih.gov/35388197
https://pubmed.ncbi.nlm.nih.gov/35388197