Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Steve Gausepohl"'
Autor:
Harold L. Hughes, William Allen, Michael L. Alles, En Xia Zhang, Steve Gausepohl, P.J. McMarr, Everett Comfort, Martin Rodgers, Ji Ung Lee
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4483-4487
We measured the total ionizing dose response of gate-all-around silicon nanowire n- and pMOSFETs to x-ray doses up to 2Mrad(SiO2). We show that they are radiation hard, with no degradation in threshold voltage, off-state current, or subthreshold slop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::088401e17fb6d9c670a840414bd7bfa0
https://doi.org/10.1109/tns.2013.2280247
https://doi.org/10.1109/tns.2013.2280247
Autor:
Chris Hobbs, Richard P. Hill, Harlan Stamper, B.-G. Min, Raj Jammy, Daniel Franca, Martin Rodgers, Paul Kirsch, Steve Gausepohl, Saikumar Vivekanand, K.-W. Ang, Injo Ok
Publikováno v:
ECS Transactions. 50:669-672
High mobility materials (such as SiGe, Ge and III-V) are attractive replacements for the conventional Si channel material in future CMOS technology nodes (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ea8d9b2cf04d9c9acd58de8407da93
https://doi.org/10.1149/05009.0669ecst
https://doi.org/10.1149/05009.0669ecst
Autor:
Poh Cheng Tan, Steve Gausepohl, Nancy Bell, Laura Safran, Greg Prando, Jerry Mase, Craig Sinn, Angel Rodriquez, Gerold Jerry Lehman, Chinh Nguyen, Min Su Fung, Nancy Zhang
Publikováno v:
ECS Transactions. 3:377-386
The Development of a manufacturable Silicon-Germanium (SiGe) epitaxial process was the fundamental breakthrough that enabled the SiGe technology revolution . The integration of SiGe heterojunction bipolar transistors (HBT) with existing CMOS technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::664cffa184ab4e711d9d2c79bdb0b4cc
https://doi.org/10.1149/1.2355835
https://doi.org/10.1149/1.2355835
Autor:
R. Jammy, Chris Hobbs, Injo Ok, Steve Gausepohl, B.-G. Min, Daniel L. Franca, M. Gunji, Paul Kirsch, P. Y. Hung, K.-W. Ang, M. Rodgers
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
Advanced, fully depleted devices such as FinFET or Tri-Gate transistors are increasingly sought after to enable density and gate length (L g ) scaling in future technology nodes. As gate-pitch scaling continues, the fin pitch must also be reduced to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::718d8b6444ffe9657b6bd7b5a28873b2
https://doi.org/10.1109/isdrs.2011.6135201
https://doi.org/10.1109/isdrs.2011.6135201