Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Steve E. Ready"'
Autor:
David Eric Schwartz, Tse Nga Ng, Ping Mei, Janos Veres, George Daniel, Brent S. Krusor, Gregory L. Whiting, Bob Street, Steve E. Ready
Publikováno v:
Printed Memory and Circuits II.
Wireless sensing has broad applications in a wide variety of fields such as infrastructure monitoring, chemistry, environmental engineering and cold supply chain management. Further development of sensing systems will focus on achieving light weight,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f539170054dff16cde754268c3f641
https://doi.org/10.1117/12.2238560
https://doi.org/10.1117/12.2238560
Autor:
William S. Wong, Jurgen H. Daniel, Beng S. Ong, Ana Claudia Arias, Alberto Salleo, Yiliang Wu, Robert Street, Steve E. Ready, Michael L. Chabinyc, Rene A. Lujan, Raj B. Apte
Publikováno v:
Journal of Information Display. 6:12-17
The need for low cost, flexible, thin film transistor (TFT) display backplanes has focused attention on new processing techniques and materials. We report the development of TFT backplane technology based entirely on jet‐printing, using a combinati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43f9a8a9542641bbc50da8a95bb36d52
https://doi.org/10.1080/15980316.2005.9651978
https://doi.org/10.1080/15980316.2005.9651978
Autor:
K. Van Schuylenbergh, L. Melekhov, P. Nylen, Kanai S. Shah, J. B. Boyce, Steve E. Ready, Robert Street, Haim Hermon, Jackson Ho
Publikováno v:
Journal of Applied Physics. 91:3345-3355
The factors determining the x-ray sensitivity of HgI2 and PbI2 as direct detector materials for large area matrix addressed x-ray image sensors are described, along with a model to explain their different properties. The imaging studies are made on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7afb84157766c54f9fbf4a53de04fc1
https://doi.org/10.1063/1.1436298
https://doi.org/10.1063/1.1436298
Publikováno v:
Journal of Applied Physics. 89:8193-8201
Studies are reported of the image-blur effects caused by lateral crosstalk between neighboring pixels of large-area amorphous silicon (a-Si:H) image sensors. Data are obtained from high fill factor sensor arrays using 512×512 pixels of 75 μm size a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b361dbdd6cb79e3b1eb0f05911ef18
https://doi.org/10.1063/1.1370111
https://doi.org/10.1063/1.1370111
Autor:
Robert A. Street, Michael L. Chabinyc, Raj B. Apte, K. E. Paul, Alberto Salleo, Rene A. Lujan, Beng S. Ong, Yiliang Wu, Steve E. Ready, William S. Wong, Ping Liu, Ana Claudia Arias
Publikováno v:
Applied Physics Letters. 85:3304-3306
Thin-film transistor (TFT) backplanes fabricated by using jet printing as the only patterning method are reported. Additive and subtractive printing processes are combined to make 128×128 pixel active matrix arrays with 340μm pixel size. The semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::801bcc771f34b1666f253514f9d4aef1
https://doi.org/10.1063/1.1801673
https://doi.org/10.1063/1.1801673
Autor:
Richard I. Johnson, Ping Mei, G. B. Anderson, J. B. Boyce, M. Hack, Steve E. Ready, R. A. Lujan, David K. Fork
Publikováno v:
Applied Physics Letters. 64:1132-1134
A low temperature process for laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a‐Si:H) has been developed. This process removes hydrogen by laser irradiations at three energy steps. Studies of hydrogen out‐diffusion an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af5ba1d27eb93fd9f9ba0fa52a627cb
https://doi.org/10.1063/1.110829
https://doi.org/10.1063/1.110829
Publikováno v:
SPIE Proceedings.
The x-ray response of polycrystalline HgI2 for direct detection x-ray imagers, is studied using test arrays with 512 X 512 pixels of size 100 micron. We quantify the contributions to the x-ray sensitivity from electron and hole charge collection, x-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a089780043b8f3ead444d54f495e93ad
https://doi.org/10.1117/12.465584
https://doi.org/10.1117/12.465584
Autor:
Steve E. Ready, Robert A. Street, Michael M. Schieber, A. Zuck, Haim Hermon, Leonid Melekhov, Alexander I. Vilensky, Larry Partain, George Zentai
Publikováno v:
SPIE Proceedings.
New results for polycrystalline Hg12 detectors are reported here. Due to its decent electrical properties and high stopping powerfor X-rays and gamma rays, Hg12 is a good candidate for many medical imaging applications. Hg12 were deposited by a hot w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb67b020d13d386a840e30597142732b
https://doi.org/10.1117/12.450792
https://doi.org/10.1117/12.450792
Autor:
Evgenie Meerson, Gary Virshup, Robert A. Street, Yehezkel Saado, Edward J. Seppi, A. Zuck, L. Partain, Haim Hermon, George Zentai, Steve E. Ready, Eliezer Shtekel, Benjamin Reisman, Raisa Pavlyuchkova, Michael M. Schieber, Alexander I. Vilensky, Michael Lukach, Leonid Melekhov
Publikováno v:
SPIE Proceedings.
Polycrystalline mercuric iodide (HgI2) photoconductor material was directly deposited on flat panel amorphous silicon (a-Si) thin film transistor (TFT) pixel arrays in order to test their application as direct x-ray conversion detectors. The 4' x 4'
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e6abadf787577c1516145d643ad2e3
https://doi.org/10.1117/12.434200
https://doi.org/10.1117/12.434200
Autor:
Benjamin Reisman, Yuri Dmitryev, A. Zuck, Haim Hermon, Paul R. Bennett, Jackson Ho, Michael M. Schieber, Steve E. Ready, Robert A. Street, Rachel Lau, Alexander I. Vilensky, Y. Sado, Marcelo Mulato, Kanai S. Shah, Koenraad F. Van Schuylenbergh, Evgenie Meerson
Publikováno v:
Medical Imaging 2001: Physics of Medical Imaging.
X-ray imaging properties are reported for HgI 2 and PbI 2 , as candidate materials for future direct detection x- ray image sensors, including the first results from screen- printed HgI 2 arrays. The leakage current of PbI 2 is reduced by using new d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa4a1beffd43a18578457fece2526e59
https://doi.org/10.1117/12.430858
https://doi.org/10.1117/12.430858