Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Stevan Hunter"'
Publikováno v:
Microelectronics Reliability. :738-744
Shear testing of wire bonds in microelectronics devices is important in bonding process qualification, but the actual mechanism of shearing Cu bonds from Al pads is not thoroughly understood. In this study, experiments and finite element analysis (FE
Publikováno v:
Microelectronics Reliability. :1124-1129
We report a method to predict wire bond lifetimes. Wire bond resistance increase due to thermal stress can be modelled by the Arrhenius equation, permitting prediction of wire bond reliability in a product prior to qualification if sufficient experim
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2018:000032-000038
Copper (Cu) wire bond is used in a majority of microelectronic devices but has not been fully accepted by all industries due to potential reliability issues. Good quality bond is believed to provide high reliability. Shear strength and intermetallic
Publikováno v:
International Symposium on Microelectronics. 2017:000432-000437
Reliability of wire bonds made with palladium-coated copper (PCC) wire of 25 μm diameter is studied by measuring the wire bond resistance increase over time in high temperature storage at 225 °C. Ball bonds are made on two bond pad thicknesses and
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2017:000068-000073
Copper (Cu) wire bonding is now widely accepted as a replacement for gold (Au), however, its use in high reliability applications is limited due to early failures in high temperature and humid conditions. The Au to Cu wire transition is mainly driven
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
Thermal stresses occur on wire Bonds due to mismatch of coefficient of thermal expansion (CTE) between wire and mold compound in addition to the global deformation of the package. This leads to different failure modes (different location of crack in
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
To add to the knowledge of high-temperature reliability of Cu wire Bonds, this work reports a method and data for the estimation of maximum operating temperature levels for various Cu wire and encapsulant combinations. An accelerated failure time mod
Publikováno v:
International Symposium on Microelectronics. 2016:000219-000226
This paper continues the work of reference [1], evaluating shear test results of Cu ball bonds over a variety of probe marks in two different pad aluminum (Al) thicknesses (0.8μm and 3μm). The presence of invasive probe marks on thick Al bond pads
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
We present electrical resistance measurements of PCC wires bonded to Al pads and aged at temperatures of 175 °C, 200 °C, and 225 °C. Wires were arranged to enable four-wire measurements of pairs of wires in series, and monitored throughout the agi
Publikováno v:
2017 IEEE 19th Electronics Packaging Technology Conference (EPTC).
Copper wire bonds have become a mainstay in many electronics areas, including automotive, where more data is needed regarding the reliability of Cu wire bonds on Al pads in high temperature conditions. Arrhenius models are frequently used to estimate