Indium-doped BiFeO₃ gas sensors for the high-sensitivity and selective SO₂F₂ detection

Autor: Din, Salah Ud, Sarwar, Fatima, Haq, Mahmood Ul, Shah, Sufaid, Azeem, Ayesha, Ashurov, Matin, Ullah, Muhammad Azeem, Stetsenko, Maksym, Zhu, Liping

Publikováno v: In Journal of Alloys and Compounds Communications September 2024 3

Near-band-edge emission enhancement and suppression of the deep levels in Ga-doped ZnO via surface plasmon-exciton coupling without a dielectric spacer

Autor: Yijian Jiang, Stetsenko Maksym, Βaikui Li, Iqra Irfan, Muhammad Faisal Iqbal, Zarfishan Kanwal, Margitych Tetiana, Ali Hassan, Muhammad Azam

Publikováno v: Journal of Materials Science: Materials in Electronics. 30:20544-20550

We presented the experimental and theoretical investigations of the surface plasmon-exciton coupled photoluminescence characteristics of Ga-doped Zinc Oxide (GZO) in Ag/GZO and Au/GZO nanostructures. An eightfold enhancement of the near-band-edge (NB

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c4d3fd539dc63b23f7f75df4c5e1178f
https://doi.org/10.1007/s10854-019-02418-2

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Localized Surface Plasmon Resonance in Gold Porous Films

Autor: Stetsenko, Maksym, Maksimenko, L.S., Rudenko, S.P., Krischenko, I.M., Manoilov, E.G., Kaganovich, E.B., Serdega, B.K.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f19efe91d832cd1371c665a952446fda

Gold Nanoparticle Self-Aggregation on Surface with 1,6-Hexanedithiol Functionalization.

Autor: Stetsenko M; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine., Margitych T; Kyiv Institute for Nuclear Research, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine., Kryvyi S; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine.; Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland., Maksimenko L; V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03680 Kyiv, Ukraine., Hassan A; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China., Filonenko S; Pisarzhevski Institute of Physical Chemistry, National Academy of Sciences of Ukraine, 31 Prospect Nauky, 03028 Kiev, Ukraine., Li Β; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China., Qu J; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China., Scheer E; University of Konstanz, Department of Physics, Universitätsstraße 10, 78464 Konstanz, Germany., Snegir S; University of Konstanz, Department of Physics, Universitätsstraße 10, 78464 Konstanz, Germany.

Publikováno v: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2020 Mar 11; Vol. 10 (3). Date of Electronic Publication: 2020 Mar 11.