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pro vyhledávání: '"Sterna Léo"'
Autor:
Sterna, Léo
Le CEA-Leti propose des transistors bidirectionnels courant-tension sur base de la technologie récente HEMT GaN récemment appliquée à l’interrupteur de puissance. La caractéristique bidirectionnelle 4 segments ouvre de nouvelles perspectives e
Externí odkaz:
http://www.theses.fr/2018GREAT037/document
Autor:
Sterna, Léo
Publikováno v:
Energie électrique. Université Grenoble Alpes, 2018. Français. ⟨NNT : 2018GREAT037⟩
CEA-Leti offers bidirectional current-voltage transistors based on the HEMT GaN technology recently applied to the power switch design. The 4-segment bidirectional feature opens new perspectives in terms of power electronics structures and leads to e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e13d39514e00d4f1f0c00eb6852e6b31
https://theses.hal.science/tel-01888721
https://theses.hal.science/tel-01888721
Autor:
Perichon Pierre, Jeannin Pierre-Olivier, Ferrieux Jean-Paul, Frey David, Sterna Léo, Ladhari Othman
Publikováno v:
2018 IEEE International Conference on Industrial Technology (ICIT)
2018 IEEE International Conference on Industrial Technology (ICIT), 2018, Lyon, France. pp.742--746
ICIT
2018 IEEE International Conference on Industrial Technology (ICIT), 2018, Lyon, France. pp.742--746
ICIT
This paper presents the implementation of single gate bidirectional switches. In order to take fully into account the characteristics of these components, a quasi-resonant Dual Active Bridge topology has been chosen. The switches will be implemented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8fe138b34ecc4036febb0a2cbce066d
https://hal.archives-ouvertes.fr/hal-02331214
https://hal.archives-ouvertes.fr/hal-02331214