Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Steren, L. B."'
$Ab$ $initio$ calculations show the presence of a strong magnetoelectric interfacial coupling in CaMnO$_3$ ultra-thin film grown on a strained BaTiO$_3$ ferroelectric film. This heterostructure presents a polarization driven magnetic transition from
Externí odkaz:
http://arxiv.org/abs/2312.14866
Autor:
Pedroso, A. López, Barral, M. A., Graf, M. E., Llois, A. M., Aguirre, M. H., Steren, L. B., Di Napoli, S.
Publikováno v:
Phys. Rev. B 102, 085432 (2020)
The effect of high tensile strain and low dimensionality on the magnetic and electronic properties of CaMnO$_3$ ultrathin films, epitaxially grown on SrTiO$_3$ substrates, are experimentally studied and theoretically analyzed. By means of ab initio c
Externí odkaz:
http://arxiv.org/abs/2003.04813
Akademický článek
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Publikováno v:
J. Phys. Condens. Matter 8 (1996) 4529,4537
R2BaMO5 (R = Gd, Y and M = Cu, Zn) oxides have been studied by specific heat, dc magnetic susceptibility, and electron paramagnetic resonance (EPR). For one member of the series without magnetic moment at M, namely Gd2BaZnO5, measurements reveal long
Externí odkaz:
http://arxiv.org/abs/1302.6327
Direct observation of electronic inhomogeneities induced by point defect disorder in manganite films
Autor:
Sirena, M., Zimmers, A., Haberkorn, N., Kaul, E., Steren, L. B., Lesueur, J., Wolf, T., Gall, Y. Le, Grob, J. -J., Faini, G.
We have investigated the influence of point defect disorder in the electronic properties of manganite films. Real-time mapping of ion irradiated samples conductivity was performed though conductive atomic force microscopy (CAFM). CAFM images show ele
Externí odkaz:
http://arxiv.org/abs/0912.2233
Autor:
Sirena, M., Zimmers, A., Haberkorn, N., Kaul, E., Steren, L. B., Lesueur, J., Wolf, T., Gall, Y. Le, Grob, J. -J., Faini, G.
We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process
Externí odkaz:
http://arxiv.org/abs/0912.2239
Akademický článek
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Autor:
Milano, J., Steren, L. B., Llamazares, A. H. V. Repetto, Garcia, V., Marangolo, M., Eddrief, M., Etgens, V. H.
Publikováno v:
Applied Physics Letters Volume 92, Issue 3, 2008, Article number 032503
We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers grown on (1
Externí odkaz:
http://arxiv.org/abs/0707.0703
Publikováno v:
Physical Review B Volume 74, Issue 14, 2006, Article number 144402
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the anisotropy of th
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606700
Autor:
Varalda, J., Milano, J., de Oliveira, A. J. A., Kakuno, E. M., Mazzaro, I., Mosca, D. H., Steren, L. B., Eddrief, M., Marangolo, M., Demaille, D., Etgens, V. H.
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503148