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pro vyhledávání: '"Stephenie W. Butler"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 18:42-48
The polycrystalline silicon deposited by single-wafer rapid thermal chemical vapor deposition with both silane (SiH/sub 4/) and disilane (Si/sub 2/H/sub 6/) precursors have been characterized for across wafer uniformity, thickness repeatability, and
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7:134-148
In this paper, we present an architecture for a run-to-run supervisory process control system that allows the engineer to tailor the form of control for specific processes. The architecture supports different degrees of control, from model-based cont