Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Stephen Y. Wu"'
Autor:
David J. Smith, Srinivasan Krishnamurthy, Rakesh Singh, Zhi-Gang Yu, Nathan Newman, H. X. Liu, Lin Gu, Stephen Y. Wu, I. L. Krainsky, Arthur J Freeman, M. van Schilfgaarde, Julia E. Medvedeva
Publikováno v:
physica status solidi (a). 203:2729-2737
This article describes progress towards producing prototype magnetoelectronic structures based on III – N semiconductor materials. We focus on the materials properties connected with the key physical phenomena underlying potential spintronic device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f28dddea597c1f8ccc9f61600282a7aa
https://doi.org/10.1002/pssa.200669636
https://doi.org/10.1002/pssa.200669636
Publikováno v:
Journal of Magnetism and Magnetic Materials. :1395-1397
Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700–825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d87dcbeff2d63270e1cd222e690814
https://doi.org/10.1016/j.jmmm.2004.11.446
https://doi.org/10.1016/j.jmmm.2004.11.446
Angular-dependent channeling Rutherford Backscattering Spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in epitaxial Ga1-xCrxN films grown by reactive molecular-beam epitaxy. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95ecdc44660b8912050f5e1bc959743d
http://arxiv.org/abs/cond-mat/0410682
http://arxiv.org/abs/cond-mat/0410682
Autor:
M. B. Simmonds, Stephen Y. Wu, David J. Smith, H. X. Liu, Lin Gu, L. Montes, Nathan Newman, N. R. Dilley, Rakesh Singh
We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a8fb5f2de908ac9386712af000fbd9f
Autor:
David J. Smith, M. van Schilfgaarde, Nathan Newman, Lin Gu, L. Budd, Hanxiao Liu, Martha R. McCartney, Rakesh Singh, Stephen Y. Wu
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f739d09d6d3f713507fc3eaeb5fb4673
http://arxiv.org/abs/cond-mat/0212459
http://arxiv.org/abs/cond-mat/0212459
Autor:
Stephen Y. Wu, Nathan Newman
Publikováno v:
Applied Physics Letters. 89:142105
The authors report the transport properties of ferromagnetic Ga0.97Cr0.03N films with a Curie temperature of over 900K. Samples synthesized under conditions that produce the maximum occupancy of Cr atoms on the Ga site (∼90%) and the maximum ferrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc66a2155b6aaed71535e2530ff7c55f
https://doi.org/10.1063/1.2357603
https://doi.org/10.1063/1.2357603
Publikováno v:
Journal of Applied Physics. 98:046106
We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70Oe when measured after a positive field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::281eb261b6139c9d5ad9c38c94fed74b
https://doi.org/10.1063/1.2014936
https://doi.org/10.1063/1.2014936
Autor:
M. van Schilfgaarde, Nathan Newman, Martha R. McCartney, Stephen Y. Wu, L. Budd, Rakesh Kumar Singh, H. X. Liu, Lin Gu, David J. Smith
Publikováno v:
Applied Physics Letters. 85:3639-3639
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e289f05077b5b2900068357fac17c88
https://doi.org/10.1063/1.1748851
https://doi.org/10.1063/1.1748851
Autor:
H. X. Liu, Lin Gu, Rakesh Singh, N. R. Dilley, Nathan Newman, David J. Smith, Stephen Y. Wu, M. B. Simmonds, M. van Schilfgaarde, L. Montes
Publikováno v:
Scopus-Elsevier
Reactive MBE growth was used to synthesize ferromagnetic Cr-doped GaN and AlN thin films with Curie temperatures above 900K. 2% Cr-doped GaN and 7% Cr-doped AlN were found to have a saturation magnetization moment of 0.42 and 0.6 μB/Cr atom, indicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a91d087bb405827ceb3519450cd2744
http://www.scopus.com/inward/record.url?eid=2-s2.0-2942691887&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-2942691887&partnerID=MN8TOARS