Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Stephen Thoms"'
Autor:
Kaivan Karami, Aniket Dhongde, Huihua Cheng, Paul M. Reynolds, Bojja Aditya Reddy, Daniel Ritter, Chong Li, Edward Wasige, Stephen Thoms
Publikováno v:
Micro and Nano Engineering, Vol 19, Iss , Pp 100211- (2023)
We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in whi
Externí odkaz:
https://doaj.org/article/9424c6c05d4d4cf3a1c11b16f2c9bbf6
Autor:
Zijun Bian, Xingyu Zhao, Katherine J. Rae, Aye S. M. Kyaw, Daehyun Kim, Adam F. McKenzie, Ben C. King, Jingzhao Liu, Stephen Thoms, Paul Reynolds, Neil D. Gerrard, James Grant, Jonathan R. Orchard, Calum H. Hill, Connor W. Munro, Pavlo Ivanov, David T. D. Childs, Richard J. E. Taylor, Richard A. Hogg
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Autor:
Shengwei Ye, Lianping Hou, Anthony Kelly, Qusay Raghib Ali Al-Taai, Chong Li, Iain Eddie, John H. Marsh, Jue Wang, Ali Al-Moathin, Stephen Thoms
Publikováno v:
Scopus-Elsevier
Electroabsorption modulated lasers (EMLs), comprising a distributed feedback (DFB) laser and electroabsorption modulator (EAM) monolithically integrated into the same chip, are attractive because of their compact size, low fabrication cost, and their
Autor:
Guangrui Li, Ben C. King, P. Reynolds, Dae Hyun Kim, J. Grant, Richard J. E. Taylor, Richard A. Hogg, Stephen Thoms, Katherine Rae, David T. D. Childs, Jonathan R. Orchard, Adam F. McKenzie, Neil D. Gerrard, Zijun Bian, N. Babazadeh
Publikováno v:
Bian, Z, Rae, K J, King, B C, Kim, D, Li, G, Thoms, S, Childs, D T D, Gerrard, N D, Babazadeh, N, Reynolds, P, Grant, J, McKenzie, A F, Orchard, J R, Taylor, R J E & Hogg, R A 2021, ' Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes ', AIP Advances, vol. 11, no. 6 . https://doi.org/10.1063/5.0053535
AIP Advances, Vol 11, Iss 6, Pp 065315-065315-5 (2021)
AIP Advances, Vol 11, Iss 6, Pp 065315-065315-5 (2021)
This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a sq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac7464830ef153667ee2e20ee6a10296
https://pure.qub.ac.uk/en/publications/78909a1e-4cee-4482-bac6-92962698421e
https://pure.qub.ac.uk/en/publications/78909a1e-4cee-4482-bac6-92962698421e
Autor:
Ben C. King, Richard J. E. Taylor, David T. D. Childs, Adam F. McKenzie, Richard A. Hogg, Guangrui Li, N. Babazadeh, Stephen Thoms, Jonathan R. Orchard, Katherine Rae, Donald A. MacLaren, Zijun Bian, Neil D. Gerrard
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
Comment: 4 pages, 5 figures, journal submission for review
Comment: 4 pages, 5 figures, journal submission for review
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51c0f9497634b718c414e25d82484d37
http://arxiv.org/abs/2010.09306
http://arxiv.org/abs/2010.09306
Autor:
Zijun Bian, Katherine J. Rae, Adam F. McKenzie, Ben C. King, Nasser Babazadeh, Guangrui Li, Jonathan R. Orchard, Neil D. Gerrard, Stephen Thoms, Donald A. MacLaren, Richard J.E. Taylor, David Childs, Richard A. Hogg
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Autor:
K. Nishi, Richard A. Hogg, Ben C. King, Neil D. Gerrard, Keizo Takemasa, David T. D. Childs, M. Sugawara, Jonathan R. Orchard, Stephen Thoms, Katherine Rae, Richard J. E. Taylor, Adam F. McKenzie, Donald A. MacLaren
Publikováno v:
Applied Physics Letters. 118:021109
We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile
Autor:
Martin Christopher Holland, Matthias Passlack, Yee-Chia Yeo, Peter Ramvall, Stephen Thoms, I.G. Thayne, T. Vasen, Douglas Macintyre, R. Droopad, Shyh-Wei Wang, R. Contreras-Guerrero, J.S. Rojas-Ramirez, Richard Kenneth Oxland, Xu Li, Gerben Doornbos, Carlos H. Diaz, Chang Yen-An, S. W. Chang
Publikováno v:
IEEE Electron Device Letters. 37:261-264
We report the first demonstration of InAs FinFETs with fin width $\textrm {W}_{{\mathrm{fin}}}$ in the range 25–35 nm, formed by inductively coupled plasma etching. The channel comprises defect-free, lattice-matched InAs with fin height $\textrm {H
Autor:
Richard A. Hogg, Salam K. Khamas, Pavlo Ivanov, Guangrui Li, Jayanta Sarma, Alex J. Crombie, N. Babazadeh, Richard J. E. Taylor, Haiping Zhou, Ben J. Stevens, G. Ternent, David T. D. Childs, Stephen Thoms
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:493-499
The realization of a 1 × 2 coherently coupled photonic crystal surface emitting laser array is reported. New routes to power scaling are discussed and the electronic control of coherence is demonstrated.
Autor:
Timothy Vasen, Yang-Sih Chang, Stephen Thoms, Gordon C. H. Hsieh, Peter Ramvall, Yee-Chia Yeo, Gerben Doornbos, S. Wang, Chien-Hsun Wang, Georgios Vellianitis, Richard Kenneth Oxland, Carlos H. Diaz, Martin Christopher Holland, Xu Li, Iain G. Thayne, Kaimin M. Yin, Douglas Macintyre, Shang-Wen Chang, Ravi Droopad, M. Edirisooriya, Matthias Passlack, R. Contreras-Guerrero, J.S. Rojas-Ramirez
Publikováno v:
IEEE Transactions on Electron Devices. 62:2429-2436
Frequency (100 ${\rm Hz}\le f \le 1$ MHz) and temperature ( $- 50 \le T \le 20^{\circ }\text{C}$ ) characteristics of low interface state density $D_{\rm {it}}$ high- $\kappa $ gate-stacks on n-InAs have been investigated. Capacitance–voltage ( $C$