Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Stephen T. Schaefer"'
Publikováno v:
Photonics, Vol 8, Iss 6, p 215 (2021)
Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffracti
Externí odkaz:
https://doaj.org/article/e74856fc6ae44fb9875cb2d68e19d6dc
Publikováno v:
Photonics, Vol 8, Iss 215, p 215 (2021)
Photonics
Volume 8
Issue 6
Photonics
Volume 8
Issue 6
Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a8f6f3dfe68dc1ee3af03159d1a32ad
https://doi.org/10.3390/photonics8060215
https://doi.org/10.3390/photonics8060215
Autor:
Chad A. Stephenson, Christian P. Morath, Gamini Ariyawansa, Shane Johnson, Perry C. Grant, Samuel D. Hawkins, Eric A. Shaner, Rigo A. Carrasco, Clark Kadlec, Stephen T. Schaefer, Preston T. Webster, John F. Klem, Elizabeth H. Steenbergen
Publikováno v:
Journal of Applied Physics. 129:184501
Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8da2ee2dd311dee550eddcab0e32c37f
https://doi.org/10.1063/5.0047178
https://doi.org/10.1063/5.0047178
Publikováno v:
Journal of Alloys and Compounds. 859:157860
The structural and optical properties of two 210 nm thick InAsSbBi epilayers grown on (100) GaSb substrates by molecular beam epitaxy at 400 and 280 °C are investigated using X-ray diffraction, Rutherford backscattering spectroscopy, transmission el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffae19d3c3abfea11bf4e70c7281080c
https://doi.org/10.1016/j.jallcom.2020.157860
https://doi.org/10.1016/j.jallcom.2020.157860
Publikováno v:
Journal of Applied Physics. 127:165705
The physical characteristics of the fundamental absorption edge of semi-insulating GaAs and unintentionally doped GaSb, InAs, and InSb are examined using spectroscopic ellipsometry. A five parameter model is developed to describe the key characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e997ad617a6902f0abb132b9bb6425
https://doi.org/10.1063/5.0003001
https://doi.org/10.1063/5.0003001
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XV.
Strain-balanced InAs/InAsSb superlattices can be tuned to absorb and emit across the mid- to long-wave infrared, and exhibit appropriate minority carrier lifetimes for high performance infrared photodetectors. The optical quality of this material has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453ff9a8f612e6d81216b1d4accfb3c9
https://doi.org/10.1117/12.2290860
https://doi.org/10.1117/12.2290860
Autor:
Rafik Addou, Arto Aho, Aaron M. Andrews, Richardella Anthony, Donat J. As, Vitaliy Avrutin, Gavin R. Bell, Sergio Bietti, Victor Blinov, Andrea Castellano, Laurent Cerutti, Kevin Clark, Charles Cornet, Mickaël Da Silva, Phillip Dang, Hermann Detz, Molly Doran, Olivier Durand, Stephen Farrell, I.A. Fischer, Everett Fraser, Alex Freundlich, Alexandre Garreau, Mircea Guina, Teemu Hakkarainen, Drew Hanser, Isaac Hernández-Calderón, Christopher L. Hinkle, Yoshiji Horikosh, Alex Ignatiev, Sergey V. Ivanov, Roland Jäger, Valentin N. Jmerik, Shane R. Johnson, Yung-Chung Kao, Nobuyuki Koguchi, Xufeng Kou, Jenn-Ming Kuo, Naohiro Kuze, François Lelarge, Christophe Levallois, Juan Li, Wei Li, Klaus Lischka, Joao Marcelo Jordao Lopes, Donald MacFarland, Karine Madiomanana, Matthew Marek, Zetian Mi, Hadis Morkoç, Maksym Myronov, Grégoire Narcy, Dmitrii V. Nechaev, Tianxiao Nie, Alexander Nikiforov, Jiro Nishinaga, Samarth Nitin, Gang Niu, Kunishige Oe, M. Oehme, Mark O’Steen, Ümit Özgür, Oleg Pchelyakov, Paul Pinsukanjana, Dmitry Pridachin, Eric Readinger, Jean-Baptiste Rodriguez, Guillaume Saint-Girons, Stefano Sanguinetti, Stephen T. Schaefer, Achim Schöll, Andreas Schramm, Frank Schreiber, Werner Schrenk, J. Schulze, Irina V. Sedova, Arvind J. Shalindar, Aidong Shen, Ichiro Shibasaki, Leonid Sokolov, Sergey V. Sorokin, Gunther Springholz, Gottfried Strasser, Jianshi Tang, Eric Tournié, Kevin Vargason, Dominique Vignaud, Jukka Viheriälä, Bertrand Vilquin, Suresh Vishwanath, Robert M. Wallace, Lee A. Walsh, Kang L. Wang, Shu M. Wang, Preston T. Webster, Huili G. Xing, Faxian Xiu, Masahiro Yoshimoto, Tobias Zederbauer, Songrui Zhao
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906b622bf9aa2dc954e18d9ee0b85c6b
https://doi.org/10.1016/b978-0-12-812136-8.00049-9
https://doi.org/10.1016/b978-0-12-812136-8.00049-9
Publikováno v:
Microscopy and Microanalysis. 24:36-37
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::424c8a3981bbb7e7174420fe1355dc49
https://doi.org/10.1017/s1431927618000673
https://doi.org/10.1017/s1431927618000673
Publikováno v:
Journal of Applied Physics. 126:095108
The physical and chemical properties of 210 nm thick InAsSbBi layers grown by molecular beam epitaxy at temperatures between 400 and 430 °C on (100) GaSb substrates are investigated using Rutherford backscattering, X-ray diffraction, transmission el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f34649f17fb1c5f7f7c478c3fce24e08
https://doi.org/10.1063/1.5096795
https://doi.org/10.1063/1.5096795