Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Stephen T. Meyers"'
Autor:
Cong Que Dinh, Seiji Nagahara, Yuhei Kuwahara, Arnaud Dauendorffer, Soichiro Okada, Seiji Fujimoto, Shinichiro Kawakami, Satoru Shimura, Makoto Muramatsu, Kayoko Cho, Xiang Liu, Kathleen Nafus, Michael A. Carcasi, Ankur Agarwal, Mark H. Somervell, Lior Huli, Kanzo Kato, Michael Kocsis, Peter De Schepper, Stephen T. Meyers, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Chris Anderson, Patrick Naulleau
Publikováno v:
Advances in Patterning Materials and Processes XL.
Autor:
Peter De Schepper, Stephen T. Meyers, Alan J. Telecky, Amrit K. Narasimhan, Benjamin L. Clark, Andrew Grenville, Philippe Foubert, Shu Hao Chang, Jan Doise, Geert Vandenberghe, Yannick Feurprier, Poulomi Das, Danilo De Simone, Michael Kocsis, Christophe Beral, Jason K. Stowers, Onitsuka Tomoya
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
Inpria has pioneered the development of high-resolution metal oxide (MOx) photoresists designed to unlock the full potential of EUV lithography. In addition to resolution, LWR, and sensitivity to enable advanced process nodes, there are also stringen
Autor:
Harold Stokes, Brian Cardineau, Jason K. Stowers, Chang Shu-Hao, Stephen T. Meyers, Michael Kocsis, Moeen Ghafoor, Masahiko Harumoto, Pieter Vanelderen, Saika Muntaha Bari
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
For generations lithographers have worked to overcome the difficulties associated with defect mitigation, and since EUV lithography has become mature enough for HVM this concern is warranting ever increasing attention to make such processes profitabl
Autor:
Peter De Schepper, Lawrence S. Melvin, Joren Severi, Amrit K. Narasimhan, Danilo De Simone, Craig D. Needham, Ulrich Welling, Stephen T. Meyers, Joren Wouters
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
MOx resists have matured into promising alternatives to conventional CAR resists for advanced-node EUV lithography where these materials offer potential improvements to patterning fidelity and high etch resistance based on metallic components. This i
Autor:
Stephen T. Meyers, Jason K. Stowers, Michael Greer, Andrew Grenville, Craig D. Needham, Peter De Schepper, Michael Kocsis
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
The viability of EUV lithography depends upon the accurate placement of hundreds of billions of features per field with critical dimensions less than 30 nm using a minimal photon count. In this photon-limited regime, resist absorbance, radiochemical
Publikováno v:
Chemistry of Materials. 25:210-214
Nanolaminates composed of TiO2 and Al4O3(PO4)2 (AlPO) thin films have been fabricated from aqueous solution precursors. By adjusting precursor concentrations individual layers can be controlled to a thickness near 1 nm. Characterization by X-ray refl
Autor:
Kai Jiang, Benjamin L. Clark, Werner Gillijns, Edson Joseph B, Michael Greer, Peter De Schepper, Danilo De Simone, Stephen T. Meyers, Michael Kocsis, Jeremy T. Anderson, Geert Vandenberghe, Andrew Grenville, Alan J. Telecky, Brian Cardineau, Jason K. Stowers
Publikováno v:
SPIE Proceedings.
Inpria continues to leverage novel metal oxide materials to produce high resolution photoresists for EUV lithography with high optical density and etch resistance. Our resists have previously demonstrated 13nm line/space patterns at 35 mJ/cm2, with e
Autor:
Peter De Schepper, Jason K. Stowers, Fumiko Yamashita, Geert Vandenberghe, Andrew Grenville, Danilo De Simone, Stephen T. Meyers, Vinh Luong, Benjamin L. Clark, Frederic Lazzarino, Michael Kocsis, Doni Parnell, Ming Mao
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process modu
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:823-828
The authors describe a nanoimprint method for an all-inorganic resist material, aluminum oxide phosphate. The resist is free of organic additives, water-based, environmentally benign and yields dense, amorphous, crack-, and pore-free films after anne
Autor:
Jeremy T. Anderson, John F. Wager, Douglas A. Keszler, John F. Thompson, Celia M. Hung, Stephen T. Meyers
Publikováno v:
Journal of the American Chemical Society. 130:17603-17609
A simple, low-cost, and nontoxic aqueous ink chemistry is described for digital printing of ZnO films. Selective design through controlled precipitation, purification, and dissolution affords an aqueous Zn(OH)(x)(NH(3))(y)((2-x)+) solution that is st