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As a usual procedure, silicon solar cells are characterized in test laboratories at standard testing conditions (STC) and are also optimized for these. However, as the cells’ performance parameters are dependent on temperature, which differs in rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8da5467f6f7efa10ee265940ada177de
https://publica.fraunhofer.de/handle/publica/257000
https://publica.fraunhofer.de/handle/publica/257000
Autor:
Ino Geisemeyer, Florian Schindler, Wilhelm Warta, Bernhard Michl, Milan Padilla, Martin C. Schubert, Stephen T. Haag
Publikováno v:
IEEE Journal of Photovoltaics. 4:1502-1510
We present an overview of imaging techniques for analyzing different loss mechanisms in solar cells. The bulk and surface recombination, optical, series resistance, and shunt losses are investigated in more detail. It is shown that a detailed spatial