Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Stephen R. Gilbert"'
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 58:916-923
First results on a novel voltage controlled oscillator (VCO) in the lower gigahertz range, featuring excellent phase noise and high power efficiency are presented. The heart of the VCO is a recently reported novel miniature two-pole decoupled stacked
Autor:
Tiberiu Jamneala, U. Koelle, Stephen R. Gilbert, Alexandre Shirakawa, Phil Nikkel, Richard C. Ruby, C. Feng
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 56:2553-2558
Coupled resonator filters designed using a single-layer coupler require coupling materials with an acoustic impedance less than 5.0 MRayl. Carbon-doped oxide, with an acoustic impedance of 4.8 MRayl and an acoustic attenuation of 200 to 600 dB/cm at
Autor:
Scott R. Summerfelt, K. K. Singh, D. Carl, S. Hunter, Jun Amano, D. Ritchey, D. V. Taylor, Stephen R. Gilbert, Theodore S. Moise, Tomoyuki Sakoda, C. Kazemi, B. Bierman, C. Chi, S. Aggarwal
Publikováno v:
Journal of Applied Physics. 93:1713-1717
To realize the full potential of high density embedded ferroelectric memory, ferroelectric film thickness must be scaled below 100 nm to ensure that the capacitor operating voltage is compatible with advanced, low voltage logic transistors. In this a
Autor:
Lori Callaghan, Gerald Ong, Jackie Tan, Steve Ortiz, Rich Ruby, Reed Parker, Stephen R. Gilbert, Frank Bi, Choon Chowe Chen, Martha K. Small, Lexie Kekoa, Norashaz Bin Alias
Publikováno v:
2014 IEEE International Ultrasonics Symposium.
We present a robust, chip-scale packaged FBAR oscillator that is compatible with high volume manufacturing. The oscillator's extremely small size (area < 1 mm2, thickness = 0.23 mm) combined with an SMT-compatible pad design enables integration of th
Autor:
Reed Parker, Stephen R. Gilbert, Lori Callaghan, Julie E. Fouquet, Martha K. Small, Suresh Sridaran, Rich Ruby, Steve Ortiz, Frank Bi
Publikováno v:
2014 IEEE International Ultrasonics Symposium.
We present a FBAR oscillator that operates at 628MHz, achieves low jitter
Autor:
Michelle T. Schulberg, R. V. Wang, R. J. Becker, J. H. Ahn, Paul C. McIntyre, L. Wills Mirkarimi, Stephen R. Gilbert
Publikováno v:
Journal of Applied Physics. 89:6378-6388
The kinetics of deuterium doping of and removal from polycrystalline (Ba,Sr)TiO3 (BST) thin films during annealing were investigated using secondary ion mass spectrometry depth profiling, and the data were correlated to changes in the electrical beha
Autor:
P. Chen, Francis G. Celii, Theodore S. Moise, L. Archer, Scott R. Summerfelt, M. W. Russell, S. M. Bilodeau, P. C. Van Buskirk, Daniel J. Vestyck, R. Beavers, Stephen T. Johnston, Stephen R. Gilbert
Publikováno v:
Integrated Ferroelectrics. 27:227-241
We report the effect of top electrode structure on the electrical properties of ferroelectric Pb(ZrxTi1-x)O3 (PZT) capacitors. Samples with Ir/PZT/Ir or Ir/IrO2/PZT/Ir stacks were prepared using reactively sputtered Ir/IrO2 (top) and Ir (bottom) elec
Publikováno v:
Integrated Ferroelectrics. 21:355-366
The deposition temperature dependence of Ba0.7Sr0.3TiO3 (BST) thin film physical and electrical properties was investigated. Films were deposited between 250 and 500°C by electron cyclotron resonance (ECR) plasmaenhanced liquid source metalorganic c
Autor:
Steve Ortiz, L. Callaghan, Martha K. Small, Frank Bi, Reed Parker, Stephen R. Gilbert, Richard C. Ruby, Fan Zhang
Publikováno v:
2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC).
We present a fourth-design generation Free Running Oscillator and Voltage Controlled Oscillator using integrated bipolar circuitry in the lid wafer with a temperature-compensated FBAR resonator in the base wafer. The goal is to produce a high frequen
Autor:
Stephen R. Gilbert, Manohar Nagaraju, Kannan Aryaperumal Sankaragomathi, Brian Otis, Richard C. Ruby
Publikováno v:
2012 IEEE International Ultrasonics Symposium.
We present the first IC oscillator using acoustically coupled FBAR's with a 3.75% tuning range. The tuning range is higher than previous low-power FBAR oscillators and wide enough to cover the individual ISM bands. The high Q of the resonator enables