Zobrazeno 1 - 10
of 119
pro vyhledávání: '"Stephen K. Streiffer"'
Publikováno v:
National Virtual Biotechnology Laboratory Symposium: Harnessing the unique strengths of DOE to tackle the biotechnology challenges of COVID-19, October 28, 2020.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8332bbbcc3d67670015ac5c58db923b5
https://doi.org/10.2172/1718911
https://doi.org/10.2172/1718911
Autor:
Stephen K. Streiffer, Karin M. Rabe, Jean-Marc Triscone, Chang-Beom Eom, Darrell G. Schlom, Long Qing Chen
Publikováno v:
Annual Review of Materials Research. 37:589-626
Predictions and measurements of the effect of biaxial strain on the properties of epitaxial ferroelectric thin films and superlattices are reviewed. Results for single-layer ferroelectric films of biaxially strained SrTiO3, BaTiO3, and PbTiO3 as well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48f64fd717737a73ba5899472b9c1026
https://doi.org/10.1146/annurev.matsci.37.061206.113016
https://doi.org/10.1146/annurev.matsci.37.061206.113016
Autor:
Y. Jia, Stephen K. Streiffer, Darrell G. Schlom, S.J. Fulk, Altaf H. Carim, Dillon D. Fong, Marilyn E. Hawley, D. J. Comstock, J. Lettieri, Stacy Knapp, M. A. Zurbuchen, Xiaoqing Pan, Wei Tian, G. Asayama
Publikováno v:
Journal of Materials Research. 22:1439-1471
Out-of-phase boundaries (OPBs) are translation boundary defects characterized by a misregistry of a fraction of a unit cell dimension in neighboring regions of a crystal. Although rarely observed in the bulk, they are common in epitaxial films of com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd7885908c701934382a6b7a5f269c7
https://doi.org/10.1557/jmr.2007.0198
https://doi.org/10.1557/jmr.2007.0198
Autor:
Paul H. Fuoss, G. B. Stephenson, Stephen K. Streiffer, Carol Thompson, Dillon D. Fong, F. Jiang, Rui Wang, J. A. Eastman, K. Latifi
Publikováno v:
Thin Solid Films. 515:5593-5596
In situ synchrotron X-ray scattering and fluorescence techniques were used to simultaneously observe the evolution of the strain and composition of a growing crystal surface in real time. Control of the X-ray incidence angle allows us to obtain high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c80b09aebb92ad86eb739cd0281c70
https://doi.org/10.1016/j.tsf.2006.12.019
https://doi.org/10.1016/j.tsf.2006.12.019
Autor:
Dillon D. Fong, Orlando Auciello, G. B. Stephenson, Stephen K. Streiffer, Paul H. Fuoss, Jeffrey A. Eastman, Carol Thompson
Publikováno v:
Journal of Synchrotron Radiation. 12:163-167
In situ synchrotron X-ray scattering was used to observe both the growth of PbTiO3 films by metal-organic chemical vapour deposition and the behaviour of the ferroelectric phase transition as a function of film thickness. The dependences of growth mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2dc1b90f979655d3d3ad638bf55d26ca
https://doi.org/10.1107/s0909049504025816
https://doi.org/10.1107/s0909049504025816
Autor:
Darrell G. Schlom, Long Qing Chen, B. Craigo, Wontae Chang, Wei Tian, Stephen K. Streiffer, Y. L. Li, Marilyn E. Hawley, Xiaoqing Pan, Steven W. Kirchoefer, Jeremy Levy, J. H. Haeni, Reinhard Uecker, Alexander K. Tagantsev, Patrick Irvin, P. Reiche, Somnath Choudhury
Publikováno v:
Nature. 430:758-761
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T(c)) is traditionally accomplished by chemical substitution-as in Ba(x)Sr(1-x)TiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cbb5ecefc8f893d15320e981d60ed0a
https://doi.org/10.1038/nature02773
https://doi.org/10.1038/nature02773
Autor:
Y. L. Li, G. Asayama, Darrell G. Schlom, Long Qing Chen, Stephen K. Streiffer, M. A. Zurbuchen
Publikováno v:
Journal of Applied Physics. 95:6332-6340
Ferroelectric domain structures of (001)SrBi2Nb2O9 epitaxial films, investigated using both transmission electron microscopy and phase-field simulations, are reported. Experiment and numerical simulation both reveal that the domain structures consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28df9f9571bd7c27de7f8148ad181004
https://doi.org/10.1063/1.1707211
https://doi.org/10.1063/1.1707211
Autor:
Dillon D. Fong, Orlando Auciello, Stephen K. Streiffer, Jeffrey A. Eastman, G. B. Stephenson, Paul H. Fuoss, M. V. Ramana Murty, M. E. M. Aanerud, Carol Thompson, Anneli Munkholm
Publikováno v:
Physica B: Condensed Matter. 336:81-89
As part of a program to understand and control the structure of ferroelectric thin films grown by metal organic vapor phase epitaxy (MOVPE), we have used X-ray scattering to observe the surface structure of PbTiO 3 films during and following growth.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77946c99e753849c3d8dcc3d0c376c4e
https://doi.org/10.1016/s0921-4526(03)00273-4
https://doi.org/10.1016/s0921-4526(03)00273-4
Publikováno v:
Thin Solid Films. 413:243-247
Low dielectric loss and high electrical breakdown fields, in conjunction with an application-specific permittivity response, are simultaneous requirements for (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} thin films. This has proved problematic, in tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4877103674da0b1e0232a4dc1226e87
https://doi.org/10.1016/s0040-6090(02)00348-6
https://doi.org/10.1016/s0040-6090(02)00348-6
Autor:
Stephen K. Streiffer, D. Y. Kaufman, Jaemo Im, Orlando Auciello, Alan R. Krauss, P. K. Baumann
Publikováno v:
Integrated Ferroelectrics. 34:263-270
High permittivity (BaxSr1−x)Ti1+yO3+z(BST) thin films are being investigated for integration into charge storage dielectrics and electric-field tunable elements for high frequency devices. For the latter application, it is desirable to have BST cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0991782b0a4b5d0a309968d428855ac5
https://doi.org/10.1080/10584580108012896
https://doi.org/10.1080/10584580108012896