Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Stephen K. Powell"'
Autor:
J.M. McGarrity, Neil Goldsman, Stephen K. Powell, Joseph Bernstein, Aivars J. Lelis, Charles Scozzie
Publikováno v:
Journal of Applied Physics. 92:4053-4061
A detailed analysis of silicon-carbide (SiC) metal–oxide–semiconductor field-effect-transistor (MOSFET) physics is performed. Measurements of current–voltage characteristics are taken. A device simulator is developed based on the drift–diffus
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
In this paper, experiment and simulation on n-type Ti/4H SiC Schottky diodes were performed. I-V measurements for 4H-SiC Schottky diodes under different temperatures were performed in an ITS8000 testing system. The combined use of the device simulato
Publikováno v:
2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).
Since an oxide can be grown on SiC it has great potential as a material on which MOS technology can be based. However, performance degradation of SiC enhancement mode MOSFETs due to poor quality SiC/SiO/sub 2/ interfaces continues to be a critical is
Publikováno v:
Journal of Applied Physics. 97:046106
We expand upon previous work [S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, and A. Lelis, J. Appl. Phys. 92, 4053 (2002)] by applying the device model to 6H silicon carbide metal-oxide-semiconductor field-effect transistors