Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Stephen J. York"'
Autor:
Pieter-Jan Sabbe, Simon Brown, Mieke Adriaens, Mark Dowsett, Eleanor J. Schofield, David Walker, Stephen J. York, Jorge Alves Anjos, Didier Wermeille, Pam A. Thomas
Publikováno v:
JOURNAL OF SYNCHROTRON RADIATION
'Journal of Synchrotron Radiation ', vol: 27, pages: 653-663 (2020)
Journal of Synchrotron Radiation
'Journal of Synchrotron Radiation ', vol: 27, pages: 653-663 (2020)
Journal of Synchrotron Radiation
A new method using a high-sensitivity X-ray camera for a large-range diffraction pattern is presented; it confirms the effectiveness of over 35 years of conservation treatment for brass artefacts from the Mary Rose.
Synchrotron X-ray diffraction
Synchrotron X-ray diffraction
Autor:
Michael R. Jennings, Steven A. Hindmarsh, Craig A. Fisher, Stephen A. O. Russell, Dean P. Hamilton, Philip Mawby, Stephen J. York, David Walker
Publikováno v:
Materials Science Forum. 858:557-560
In this paper, the source contacts of three different SiC MOSFET power device dies have been investigated using TEM and EDX analysis before and after long-term isothermal heating at 300°C in air. The device type with Al-Ni based ohmic source contact
Publikováno v:
Crystal Growth & Design. 15:5202-5206
Topological insulators (TIs) and topological crystal insulators (TCIs) exhibit exotic surface properties. We present optimised growth procedures to obtain high quality bulk crystals of the TCIs Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se, and nanowires fro
Autor:
Stephen J. York, Yogesh K. Sharma, Philip Mawby, Craig A. Fisher, Michael R. Jennings, Steven A. Hindmarsh, Dean P. Hamilton
Publikováno v:
Materials Science Forum. :681-684
In this paper, we demonstrate the degradation of commercially available 1.2kV SiC MOSFET bare dies subjected to long periods of isothermal heating at 300°C in air. Periodic electrical measurements indicated an increase in on-state resistance to diff
Publikováno v:
Crystal Growth & Design. 14:2009-2013
A new class of materials, Topological Crystalline Insulators (TCIs) have been shown to possess exotic surface state properties that are protected by mirror symmetry. These surface features can be enhanced if the surface-area-to-volume ratio of the ma
Autor:
Zheng Liu, Stephen J. York, Ian A. Kinloch, Kazu Suenaga, Jonathan P. Rourke, Robert J. Young, Jeremy Sloan, Priyanka A. Pandey, Neil R. Wilson, Lei Gong, Richard Beanland
Publikováno v:
ACS Nano. 3:2547-2556
We report on the structural analysis of graphene oxide (GO) by transmission electron microscopy (TEM). Electron diffraction shows that on average the underlying carbon lattice maintains the order and lattice-spacings of graphene; a structure that is
Autor:
Yogesh K. Sharma, Dean P. Hamilton, Philip Mawby, Craig A. Fisher, Stephen J. York, Michael R. Jennings
Publikováno v:
MRS Proceedings. 1693
The Publisher's final version can be found by following the DOI link. Silicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have bee