Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Stephen J. Hudgens"'
Autor:
Stephen J. Hudgens, Wally Czubatyj
Publikováno v:
Electronic Materials Letters. 8:157-167
The high current switching characteristics of the thin-film Ovonic Threshold Switch (OTS) offer unique advantages in modern applications. This paper covers the current theoretical understanding of the OTS switching process and highlights relevant mat
Autor:
Stephen J. Hudgens
Publikováno v:
Journal of Non-Crystalline Solids. 354:2748-2752
Phase-change memory (PCM) has recently been under active development by a number of semiconductor manufacturing companies and research laboratories. This development has been accelerated both by the rapidly growing market for nonvolatile memory in ce
Autor:
B. Johnson, Stephen J. Hudgens
Publikováno v:
MRS Bulletin. 29:829-832
Phase-change nonvolatile semiconductor memory technology is based on an electrically initiated, reversible rapid amorphous-to-crystalline phase-change process in multicomponent chalcogenide alloy materials similar to those used in rewriteable optical
Autor:
Carl Schell, J. Reed, W. Hunks, Stephen J. Hudgens, Charles H. Dennison, Regino Sandoval, W. Li, Tyler Lowrey, J. Fournier, J. F. Zheng, Wolodymyr Czubatyj
Publikováno v:
IEEE Electron Device Letters. 31:999-1001
Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstr
Publikováno v:
IEEE Electron Device Letters. 31:869-871
Phase-change memory alloys based on germanium, antimony, and tellurium with SiO2 nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys are prepared by cosputtering with a SiO2 target creating nanophas
Autor:
J. Cleary, Carl Schell, J. Reed, W. Hunks, P. Chen, Stephen J. Hudgens, Jim Ricker, W. Li, Tyler Lowrey, Regino Sandoval, Wolodymyr Czubatyj, Charles H. Dennison, J. F. Zheng
Publikováno v:
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.
MOCVD (Metal-organic Chemical Vapor Deposition) has been investigated extensively to achieve smooth and conformal deposition of GST (GeSbTe) films. The studies are focused on filling confined cells as well as improving material properties for high pe
Autor:
Weimin Li, Jim Ricker, Tyler Lowrey, J. Reed, Chuck Dennison, Regino Sandoval, Jeff Roeder, Jeffery Fournier, Chongying Xu, Guy C. Wicker, Wally Czubatyj, Carl Schell, Stephen J. Hudgens, William Hunks, Phil Chen, Jun-Fei Zheng, Smuruthi Kamepalli, Matthias Stender
Publikováno v:
MRS Proceedings. 1160
We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposit
Publikováno v:
Disordered Materials ISBN: 9781468487473
During the past year a large number of models have been proposed to explain high Tc superconductivity in Cu-0 ceramic compounds. A nearly equal number of novel charge carrier pairing mechanisms have been invoked in these models as alternatives to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f56fb14c394a0595d485027d1d4505c8
https://doi.org/10.1007/978-1-4684-8745-9_33
https://doi.org/10.1007/978-1-4684-8745-9_33
Publikováno v:
Journal of Non-Crystalline Solids. 66:187-192
The gap state distribution (GSD) of aSi1−xGex:H alloys in the upper half of the mobility gap has been studied as a function of Ge content by using transient photoconductivity, steady state photoconductivity, and space charge limited conduction i
Publikováno v:
Journal of Non-Crystalline Solids. 66:65-70
We have studied the annealing behavior of light-induced changes in room temperature photoconductivity, density of states at the Fermi level, sub-band gap absorption and collection width of minority carriers in hydrogenated amorphous silicon alloys fo