Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Stephen E. Stone"'
Autor:
Jean-Marie Lauenstein, Jeffrey L. Titus, K. Huntington, L. W. Mason, D. A. Clymer, M. Sivertz, R. Koga, E. Beach, T.L. Turflinger, Stephen E. Stone, J. George
Publikováno v:
IEEE Transactions on Nuclear Science. 64:317-324
Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage ( $\text {V}_{\mathrm { {DS}}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd37fc2f8d62515b1801943e097294c
https://doi.org/10.1109/tns.2016.2633358
https://doi.org/10.1109/tns.2016.2633358
Autor:
K. Huntington, E. Beach, D. A. Clymer, T.L. Turflinger, R. Koga, L. W. Mason, Stephen E. Stone, J. George
Publikováno v:
IEEE Transactions on Nuclear Science. 64:309-316
A study of proton-induced destructive SEE (DSEE) from Au-plated lid fission fragments has been expanded. Seventeen additional lid materials (Z =26–83) are studied. Lead (Pb) produced a higher sensitivity than seen in previous work with gold (Au), r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6042dff6c94d0ddef77e09dc62693bcf
https://doi.org/10.1109/tns.2016.2626960
https://doi.org/10.1109/tns.2016.2626960
Autor:
R. Koga, M.W. Savage, L. W. Mason, J. George, D. A. Clymer, E. Beach, Stephen E. Stone, T.L. Turflinger, K. Huntington
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2468-2475
Proton single event dielectric rupture was observed in Analog Devices OP470 devices only when the package included gold flashing facing the die on the inner surface of the metal lid. The supply voltage was also a factor. Analysis shows that proton on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7213e65f11a6c6fa5c49e6d2ae75a30
https://doi.org/10.1109/tns.2015.2496288
https://doi.org/10.1109/tns.2015.2496288
Autor:
Larry W. Mason, Oluwole Amusan, Kerry Huntington, Elden Beach, Daniel Clymer, Stephen E. Stone, T.L. Turflinger
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
This paper examines Destructive Single Event Effects (DSEE) in RF GaAs components and while many low power components demonstrated immunity, the work shows the need to establish Safe Operating Areas (SOAs) while considering all aspects of design spac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb4ff58bcc01547293da5e21cb0ab4f3
https://doi.org/10.1109/nsrec.2018.8584273
https://doi.org/10.1109/nsrec.2018.8584273
Autor:
Andres Perez-Celis, Asa Angeles, Sebastian E. Garcia, Gary Swift, William J. Rowe, Robert Liu, Krysten H. Pfau, Kyle P. Robinson, Kevin W. Wray, Michael Wirthlin, Jonathan Holden, Stephen E. Stone, Barry L. Willits
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Recent proton and heavy ion SEE data are presented for selected Virtex-7 architectural features requiring dynamic in-beam testing: I/O blocks in various modes, IOSERDES, digital- and phase-locked loop clocks, and block memory’s error correction cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0d3eefdef2a6445c340e1bf49d2baf1
https://doi.org/10.1109/radecs.2017.8696210
https://doi.org/10.1109/radecs.2017.8696210
Publikováno v:
IEEE Transactions on Nuclear Science. 59:3148-3153
More than 10 years of on-orbit UC1864 SEU data are compared with typical upset rate calculation methodologies and GCR environments. Results suggest that the most common calculation methods overestimate upset rates by at least 2×. Mitigation techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba33f26c3317579c5a7f1b0962bb22c
https://doi.org/10.1109/tns.2012.2224128
https://doi.org/10.1109/tns.2012.2224128
Publikováno v:
Nuclear Technology. 172:295-301
Silicon carbide (SiC) is a promising semiconductor material for use in solid-state radiation detectors. SiC’s wide bandgap makes it an appropriate semiconductor for high-temperature applications. B...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d3434caf604ca75829bd48c885138f
https://doi.org/10.13182/nt10-a10938
https://doi.org/10.13182/nt10-a10938
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 622:200-206
The effects of neutron irradiation on the electrical properties of highly doped 4H SiC were studied. The material was fabricated into standard Hall bars for characterization of the material’s resistivity, free-carrier concentration and electron Hal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d2a662d04b86d0e6499b876ced08370
https://doi.org/10.1016/j.nima.2010.06.211
https://doi.org/10.1016/j.nima.2010.06.211
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2804-2806
SEU data for more than 250 equivalent on-orbit SRAM device years is compared with upset rate calculations using various environmental models and contributions of both direct ionization and nuclear interactions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b8a5575ddd30fd278fa2bc46879ca86
https://doi.org/10.1109/tns.2011.2167242
https://doi.org/10.1109/tns.2011.2167242
Publikováno v:
2013 IEEE Radiation Effects Data Workshop (REDW).
High energy heavy ion testing of LM139 and AD9042 performed at NASA Space Radiation Laboratory offers new insight into device SEE response in the space environment.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75fffe7d75080d39e3ac8b191270111d
https://doi.org/10.1109/redw.2013.6658196
https://doi.org/10.1109/redw.2013.6658196