Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Stephen E. Knight"'
Autor:
Yentl M. Juggernath, Stephen E. Knight
Publikováno v:
African Vision and Eye Health, Vol 74, Iss 1, Pp e1-e5 (2015)
Background: The World Health Organization estimates that 12 million children worldwide between the ages of 5 and 15 years have visual impairment owing to uncorrected refractive error. Aim: To assess whether the knowledge and practices of visual acui
Externí odkaz:
https://doaj.org/article/863048104e244a96918f38d03c0fa603
Publikováno v:
South African Family Practice, Vol 59, Iss 3 (2017)
Background: The Selective Programme (Selectives) at the University of KwaZulu-Natal (UKZN) is a three-year longitudinal, community-based programme within the undergraduate medical curriculum, which aims to develop primary health care (PHC) and public
Externí odkaz:
https://doaj.org/article/e83bb3a1ef0d41c4a3facf952ff5803d
Publikováno v:
SPIE Proceedings.
The reduction of post-develop defects in photomask making is significantly more critical than in wafer processing. While wafers can afford to experience some level of defect density, photomasks are required to be defect free. Defect density learning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09407d184f48659564d01ad8e603b4e7
https://doi.org/10.1117/12.477006
https://doi.org/10.1117/12.477006
Autor:
Anthony K. Stamper, John L. Sturtevant, Stephen E. Knight, Ed Valentine, Steven J. Holmes, Denis J Poley, Will Conley, Ahmad D. Katnani, Linda K. Somerville, Paul A. Rabidoux, Thomas L. McDevitt, James Thomas Fahey
Publikováno v:
SPIE Proceedings.
The role of the wafer substrate in processing of chemically amplified DUV photoresists has been examined. Various substrates including silicon, oxide, titanium nitride, silicon nitride and metals were investigated with both positive and negative tone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c186d9e6fd97180c684b84796c02a08f
https://doi.org/10.1117/12.175469
https://doi.org/10.1117/12.175469
Autor:
Denis J Poley, Katherine C. Norris, John L. Sturtevant, Steven J. Holmes, Stephen E. Knight, Karey L. Holland, Dean Writer, Andy Horr, Mark C. Hakey, Paul A. Rabidoux, J. Guidry, Dean C. Humphrey, Diana D. Dunn, Albert S. Bergendahl, D. Macaluso
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II.
Lithographers have steadily reduced exposure wavelength and increased numerical aperture (NA) to maintain process window and simplicity. The G-line systems of the 1970s gave way to the I-line systems of the late 80s, and then to the deep ultraviolet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b54f316d5e8e85e16811af43e039f61
https://doi.org/10.1117/12.136040
https://doi.org/10.1117/12.136040
Publikováno v:
SPIE Proceedings.
This investigation studies linewidth metrology techniques and compares SEM measurement results with an electrical linewidth probe procedure. Calibration offsets between reticle, resist, etched, and electrical probe dimensions are compared for the 500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4df4daf5db76b775480038b3d00ae2dd
https://doi.org/10.1117/12.44429
https://doi.org/10.1117/12.44429
Autor:
Stephen E. Knight, Katherine C. Norris, Steven J. Holmes, Denis J Poley, Ruth Levy, Karey L. Holland, John G. Maltabes, Albert S. Bergendahl
Publikováno v:
Optical/Laser Microlithography III.
Each DRAM design generation has required higher reoiution imaging and overlay capability. The 500-nm lithographic ground rules of a 16-Mb chip make deep-UV (DUV) an attractive alternative to,thc more stanth,rd mid-UV (MUV) photolithography presently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28ca89b84633f3668c46681572ccb8a
https://doi.org/10.1117/12.20180
https://doi.org/10.1117/12.20180
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