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pro vyhledávání: '"Stephans Vezian"'
Autor:
Bernard Gil, Benjamin Damilano, Thi Huong Ngo, Jean Massies, Pierre Valvin, Stephans Vezian, Tatiana V. Shubina
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Porous GaN and (Ga,In)N/GaN single quantum well layers are fabricated using a selective area sublimation (SAS) technique from initially smooth and compact 2-dimensional (D) layers grown on Si(111) or c-plane sapphire substrates1. Designs of the sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb768737376d7b4c0039754860866a66
https://doi.org/10.1109/iciprm.2019.8819160
https://doi.org/10.1109/iciprm.2019.8819160
