Zobrazeno 1 - 10 of 29 pro vyhledávání: '"Stephanie Rennesson"'
1
How a ridge polariton laser is different from a standard ridge laser
Autor: Thierry Guillet, Stephanie Rennesson, Laetitia Doyennette, Edmond Cambril, Blandine Alloing, Jesús Zúñiga-Pérez, M. Gromovyi, Dmitry Solnyshkov, Christelle Brimont, Pierre Disseix, Guillaume Malpuech, Fabrice Semond, François Réveret, Sophie Bouchoule, Joël Leymarie, F. Médard, H. Souissi, G. Kreyder, T. Gueye
Publikováno v: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
The physics of gain in interband semiconductor lasers is mostly discussed in terms of population inversion for electrons and holes and the associated Bernard-Durrafourg condition. Due to the reciprocity between the processes of absorption and stimula
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bd8bf21fadb8ec604bae8d3d7f09d77f
https://doi.org/10.1109/cleo/europe-eqec52157.2021.9541728
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2
Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy
Autor: Jesús Zúñiga-Pérez, Fabrice Semond, Stephanie Rennesson, M. Nemoz, Gilles Patriarche, Mathieu Leroux, Sophie Bouchoule
Publikováno v: Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2021, 150, pp.106801. ⟨10.1016/j.spmi.2020.106801⟩
International audience; Diffusion at the AlN/Al0.3Ga0.7N interface was investigated by X-ray diffraction, high-angle annular dark field scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. AlN/Al0.3Ga0.7N superlattices
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12807470e081d51ff09ad312cebe92dd
https://hal.archives-ouvertes.fr/hal-03357724/document
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3
Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
Autor: Benjamin Damilano, Christelle Brimont, Stephanie Rennesson, Sébastien Sauvage, Thierry Guillet, Moustafa El Kurdi, Xavier Checoury, Fabrice Semond, Philippe Boucaud, Jean-Yves Duboz, Farsane Tabataba-Vakili, Eric Frayssinet, Laetitia Doyennette, Bruno Gayral
Publikováno v: Scientific Reports
Scientific Reports, Nature Publishing Group, 2019, 9, pp.18095. ⟨10.1038/s41598-019-54416-3⟩
Scientific Reports, 2019, 9, pp.18095. ⟨10.1038/s41598-019-54416-3⟩
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb0a693b029a27796301edb2b04a0ac9
https://hal.archives-ouvertes.fr/hal-02393815/file/Critical_coupling_hal.pdf
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4
Blue Microlasers Integrated on a Photonic Platform on Silicon
Autor: Jean-Yves Duboz, Xavier Checoury, Christelle Brimont, Benjamin Damilano, Fabrice Semond, Philippe Boucaud, Farsane Tabataba-Vakili, Thierry Guillet, Moustafa El Kurdi, Stephanie Rennesson, Sébastien Sauvage, Eric Frayssinet, Iännis Roland, Laetitia Doyennette, Bruno Gayral
Publikováno v: ACS photonics
ACS photonics, American Chemical Society, 2018, 5 (9), pp.3643. ⟨10.1021/acsphotonics.8b00542⟩
ACS photonics, 2018, 5 (9), pp.3643. ⟨10.1021/acsphotonics.8b00542⟩
International audience; The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecc8b61277d55e230bf2e8f860b1fc54
https://doi.org/10.1021/acsphotonics.8b00542
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5
Towards III-nitride on silicon active photonic circuits
Autor: Jean-Yves Duboz, Xavier Checoury, Stephanie Rennesson, Sébastien Sauvage, Laetitia Doyennette, Bruno Gayral, Fabrice Semond, Benjamin Damilano, Farsane Tabataba-Vakili, M. El Kurdi, Thierry Guillet, Christelle Brimont, Iännis Roland, Philippe Boucaud, Julien Brault, Eric Frayssinet
Publikováno v: Frontiers in Optics + Laser Science APS/DLS.
We present our progresses towards active photonic circuits based on III-nitride semiconductors epitaxially grown on silicon. We study in particular the critical coupling of lasing InGaN/GaN microdisks to adjacent suspended waveguides.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::439b8aec564e63836bc26e30a758cfaa
https://doi.org/10.1364/fio.2019.jtu3a.76
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6
Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
Autor: Jean-Yves Duboz, Xavier Checoury, Fabrice Semond, Moustafa El Kurdi, Thierry Guillet, Philippe Boucaud, Iännis Roland, Stephanie Rennesson, Sébastien Sauvage, Farsane Tabataba-Vakili, Christelle Brimont, Bruno Gayral, Thi-Mo Tran
Publikováno v: Applied Physics Letters
Applied Physics Letters, 2017, 111 (13), pp.131103. ⟨10.1063/1.4997124⟩
Applied Physics Letters, American Institute of Physics, 2017, 111 (13), pp.131103. ⟨10.1063/1.4997124⟩
International audience; III-nitride-on-silicon L3 and H2 photonic crystal cavities with resonances down to 315 nm and quality factors up to 1085 at 337 nm have been demonstrated. The reduction of quality factor (Q) with decreasing wavelength is inves
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4339e48775b6a16d285839d6bff34405
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7
A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
Autor: Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Rozenn Bernard, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, Stephanie Rennesson, Fabrice Semond, Gilles Patriarche, Ludovic Largeau, Pascal Turban, Anne Ponchet, Cornet, C.
Publikováno v: 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018)
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
HAL
International audience; In this work, we experimentally and theoretically clarify the III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at theearly stages of AlSb, AlN and GaP molecular b
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e4cdd43b7cf4189cebabc1c9f369feb9
https://hal.science/hal-01910554
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10
Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE
Autor: Ludovic Largeau, Farid Medjdoub, Mohamed Al Khalfioui, Fabrice Semond, Jean Massies, Stephanie Rennesson, Sébastien Chenot, Ezgi Dogmus, M. Nemoz, Malek Zegaoui, Mathieu Leroux
Publikováno v: physica status solidi (a)
physica status solidi (a), Wiley, 2018, 215 (9), pp.1700640. ⟨10.1002/pssa.201700640⟩
physica status solidi (a), 2018, 215 (9), pp.1700640. ⟨10.1002/pssa.201700640⟩
International audience
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5b2e4c7ceef4ff43c25ce4200fde415
https://hal.archives-ouvertes.fr/hal-02322484
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