Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Stephane Heraud"'
Publikováno v:
AgriVoltaics Conference Proceedings, Vol 2 (2024)
Agrivoltaic (AV) Systems are a new solution for cropping conditions improvement by mitigating extreme weather conditions. Indeed, AV Systems affect microclimate, notably Air Temperature, Irradiance or Evapotranspiration that determines Soil Water Ava
Externí odkaz:
https://doaj.org/article/658617537d83447f8c3de1fed078219b
Autor:
Francisco Sanchez, Nivea Figueiro, Laurent Pain, Roy Koret, Matthew Sendelbach, Shay Wolfling, Yoann Blancquaert, Thibault Labbaye, Stephane Heraud, Ralf Michel, Stephane Rey
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXI
The evaluation of scatterometry for monitoring intended variations in innovative scatterometry targets that mimic nonuniformities potentially caused by multibeam Maskless Lithography (MEB-ML2) is presented. Specialized scatterometry targets consistin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::993372a0524e28ae2482ba3dd896c203
https://doi.org/10.1117/12.2261389
https://doi.org/10.1117/12.2261389
Autor:
Anil Gunay-Demirkol, Ronen Urenski, Igor Turovets, Anne-Laure Charley, Stephane Godny, Efrain Altamirano Sanchez, Philippe Leray, Oded Cohen, Shay Wolfling, Stephane Heraud
Publikováno v:
SPIE Proceedings.
In this work, capabilities of scatterometry at various steps of the self-aligned quadruple patterning (SAQP) process flow for 7nm (N7) technology node are demonstrated including the pitch walk measurement on the final fin etch step. The scatterometry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de308f72a635f4cc768bc48e5bd55bc0
https://doi.org/10.1117/12.2220287
https://doi.org/10.1117/12.2220287
Publikováno v:
2009 59th Electronic Components and Technology Conference.
The first part of this paper aims to illustrate the possibility to control the shape of the top of a tapered silicon via using an SF 6 /O 2 chemistry with high etch rate (∼14 µm/min). This etch has been performed using an ICP machine, customized f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21787a4e8255989dd2fea6a224217d3
https://doi.org/10.1109/ectc.2009.5074083
https://doi.org/10.1109/ectc.2009.5074083