Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Stephan Waidmann"'
Autor:
Michael P. Belyansky, Doug H. Lee, Ming Cai, Stephan Waidmann, Brian J. Greene, Karthik Ramani, Frank D. Tamweber, William K. Henson
Publikováno v:
IEEE Transactions on Electron Devices. 57:1706-1709
Strain effects from stress liners on silicon-on-insulator MOSFETs with high-k dielectric and metal gate (HKMG) are reported. By thoroughly evaluating their impact on drive current, mobility, and threshold voltage, the intrinsic performance gain of st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f919de56bdc974ac92284c03ee0e895
https://doi.org/10.1109/ted.2010.2049076
https://doi.org/10.1109/ted.2010.2049076
Autor:
Rainer Giedigkeit, Stephan Waidmann, Inka Richter, Hartmut Prinz, Van Le, Kornelia Dittmar, David M. Owen, Jeff Hebb, Shrinivas Shetty, Yun Wang, Robert Binder, M. Weisheit
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Advanced millisecond annealing technologies are being implemented to enable scaling of silicidation of Ni for contacts. There are several aspects of the millisecond annealing process that must be optimized in order to minimize defects and improve yie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec461c87d32a3339eb17bbf436eff09a
https://doi.org/10.1109/rtp.2010.5623798
https://doi.org/10.1109/rtp.2010.5623798
Autor:
Van Le, Shrinivas Shetty, Kornelia Dittmar, Jeff Hebb, Rainer Giedigkeit, Inka Richter, M. Weisheit, Stephan Waidmann, Jeffrey Mileham, Yun Wang, Hartmut Prinz, Robert Binder, Dave Owen
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Nickel silicide is a common contact material for current generation microelectronic devices. As the technology nodes become smaller, forming the NiSi phase with milli-second or below annealing is an attractive alternative to conventional RTA annealin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6a5ec4c0b2af9271e3835118c49f22
https://doi.org/10.1109/rtp.2010.5623800
https://doi.org/10.1109/rtp.2010.5623800