Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Stephan Lutgen"'
Autor:
Ashay Chitnis, Cheng-Yu Hu, Saad Murad, Wei-Sin Tan, Stephan Lutgen, Andrea Pinos, Atsushi Nishikawa, Lars Groh
Publikováno v:
physica status solidi c. 11:624-627
We report on the crystal quality and on-wafer device performance of GaN-on-Si LED wafers grown by metalorganic chemical vapour deposition on Si(111) substrates. Average XRD FWHM of 343 arcsec and 456 arcsec for the 002 and 102 reflections, respective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0a578444863a5e39a9f42b2904f01a
https://doi.org/10.1002/pssc.201300477
https://doi.org/10.1002/pssc.201300477
Autor:
Ashay Chitnis, Cheng-Yu Hu, Wei-Sin Tan, Andrea Pinos, Takuma Yagi, Atsushi Nishikawa, Saad Murad, Lars Groh, Stephan Lutgen, Victor Sizov
Publikováno v:
physica status solidi c. 11:945-948
By means of our patented strain engineering technology, we achieved high crystal quality and near zero wafer bow on our 150 mm GaN-on-Si wafers. To show the feasibility of our wafers for HEMTs with large gate periphery, we investigated the buffer bre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e054a72bfa844ad5f5ac16b154c63fd
https://doi.org/10.1002/pssc.201300534
https://doi.org/10.1002/pssc.201300534
Autor:
Victor Sizov, Michael Krieger, Markus Sickmoeller, Lars Groh, Takuma Yagi, Stephan Lutgen, Saad Murad, Heiko B. Weber, Sebastian Roensch
Publikováno v:
Materials Science Forum. :1180-1184
We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b260784c47cdca55e7b0db634d40c34c
https://doi.org/10.4028/www.scientific.net/msf.778-780.1180
https://doi.org/10.4028/www.scientific.net/msf.778-780.1180
Autor:
Victor Sizov, Stephan Lutgen, Michael Krieger, Lars Groh, Heiko B. Weber, Saad Murad, Takuma Yagi, Sebastian Roensch
Publikováno v:
Materials Science Forum. :502-505
The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures bel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c85a7e09fdd9e8e056af0822eb587ecb
https://doi.org/10.4028/www.scientific.net/msf.740-742.502
https://doi.org/10.4028/www.scientific.net/msf.740-742.502
Autor:
Christoph Eichler, Sönke Tautz, Adrian Stefan Avramescu, Uwe Strauss, Georg Bruederl, Jens Müller, Teresa Lermer, Stephan Lutgen
Publikováno v:
SID Symposium Digest of Technical Papers. 42:685-688
We report on direct green lasers based on nitride semiconductors that are suitable for mobile projection applications. The TO38 packaged lasers achieved in continuous wave operation at 522nm wavelength more than 80mW optical power. The wall plug effi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc05f74a70400f99457f8ba7f3a8dbe
https://doi.org/10.1889/1.3621416
https://doi.org/10.1889/1.3621416
Autor:
Ines Pietzonka, Adrian Stefan Avramescu, Teresa Lermer, Jens Müller, Uwe Strauss, Georg Brüderl, Stephan Lutgen
Publikováno v:
physica status solidi (a). 208:1199-1202
The origin of indium fluctuations in indium-rich quantum wells (QWs) is of high interest for direct green laser diodes. We present the correlation of morphological features such as macrosteps investigated by AFM measurements and wavelength fluctuatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86da36043ed8a3754ec90ee6d2967b95
https://doi.org/10.1002/pssa.201000695
https://doi.org/10.1002/pssa.201000695
Autor:
Christoph Eichler, Teresa Lermer, Adrian Stefan Avramescu, Georg Brüderl, Stephan Lutgen, Désirée Queren, Uwe Strauß, Alvaro Gomez-Iglesias, Jens Müller
Publikováno v:
physica status solidi (b). 248:652-657
The challenges of green InGaN lasers are discussed concerning material quality as a function of InGaN composition, quantum well design and piezoelectrical fields. Investigations of polar quantum well designs and comparison with simulated non-polar st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f28380d23f9d0ed797588d1055c63bc7
https://doi.org/10.1002/pssb.201046299
https://doi.org/10.1002/pssb.201046299
Autor:
Uwe Strauss, Jens Müller, Adrian Stefan Avramescu, Georg Bruederl, Stephan Lutgen, Teresa Lermer, Désirée Queren
Publikováno v:
physica status solidi (a). 207:1318-1322
We present true green InGaN ridge waveguide (RWG) laser diodes (LDs) at 520 nm on c-plane GaN substrates in pulse operation at room temperature. Defect reduction in the In-rich quantum wells by improving growth conditions of the epitaxial layers is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccaf4c20db7098b59b3f9b9a621b1005
https://doi.org/10.1002/pssa.200983620
https://doi.org/10.1002/pssa.200983620
Autor:
Marc Schillgalies, Christoph Eichler, Andreas Breidenassel, Adrian Stefan Avramescu, Uwe Strauss, Jens Müller, Ulrich T. Schwarz, Stephan Lutgen, Teresa Lermer, Désirée Queren, W. G. Scheibenzuber
Publikováno v:
physica status solidi (a). 207:1328-1331
In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c-plane GaN substrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::054c4c8282ef736bdf97d10290a413e6
https://doi.org/10.1002/pssa.200983410
https://doi.org/10.1002/pssa.200983410
Autor:
Stefanie Brüninghoff, Ulrich T. Schwarz, Uwe Strauss, Stephan Rogowsky, Harald Braun, Stephan Lutgen, Alfred Lell
Publikováno v:
IEEE Journal of Quantum Electronics. 45:1074-1083
Broad area (Al,In)GaN laser diodes (LDs) are suitable for high optical output power in the near UV to blue spectral range. But for ridge widths larger than a few micrometers, the occurrence of filamentation is well known. We present experimental evid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcb15d4197d553788fa0498755adf28e
https://doi.org/10.1109/jqe.2009.2019614
https://doi.org/10.1109/jqe.2009.2019614