Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Stephan Grunow"'
Autor:
Stephan Grunow, Balasubramanian S. Haran, Zeynel Bayindir, Joseph F. Shepard, Jinping Liu, Brett Yatzor, Han Tao, Sanjay Mehta, Marc Berardi, Haifeng Sheng, Rishikesh Krishnan
Publikováno v:
ECS Transactions. 85:717-728
Autor:
Dhruv Singh, A. Gassaria, V. Chauhan, A. da Silva, P. Lindo, Daniel J. Dechene, M. Gribelyuk, I. Ahsan, M. Hasan, Judson R. Holt, Rod Augur, Jaeger Daniel, G. Northrop, G. Gomba, Ghosh Somnath, H. Narisetty, Basanth Jagannathan, Ting-Hsiang Hung, P. Liu, Y. Zhong, T. Gordon, Y. Fan, C. Schiller, A. Blauberg, O. Patterson, B. Morganfeld, Andres Bryant, J. Choo, T. Nigam, B. Senapati, V. Sardesai, N. Baliga, C. An, I. Ramirez, Rishikesh Krishnan, Arkadiusz Malinowski, S. Lucarini, Z. Sun, Sadanand V. Deshpande, R. Bhelkar, Mahender Kumar, Kong Boon Yeap, D. Conklin, Q. Fang, R. Gauthier, Purushothaman Srinivasan, S. Crown, M. Ozbek, Linjun Cao, G. Han, Z. Song, L. Huang, C. Serrau, R. Sweeney, M. Tan, Keith Donegan, Souvick Mitra, A. Zainuddin, P. Agnello, Balasubramanian S. Haran, Haifeng Sheng, B. Greene, A. Hassan, Tabakman Keith, Xin Wang, Sanjay Parihar, L. Cheng, M. Lagus, Jessica Dechene, D. Xu, G. Gifford, M. Zhao, Jeyaraj Antony Johnson, Y. Yan, Rick Carter, Manoj Joshi, W. Kim, Gabriela Dilliway, Jack M. Higman, S. Kalaga, Kai Zhao, Jinping Liu, A. Ogino, M. Lipinski, Amanda L. Tessier, Garo Jacques Derderian, S. Madisetti, N. Shah, Christopher Ordonio, M. Aminpur, Rakesh Ranjan, S. Saudari, Christa Montgomery, Tony Tae-Hyoung Kim, Jeric Sarad, Jae Gon Lee, Bharat Krishnan, Joseph F. Shepard, L. Hu, J. Sporre, Akil K. Sutton, Eswar Ramanathan, Cathryn Christiansen, J.H. Han, J. Lemon, Patrick Justison, Natalia Borjemscaia, Scott C. Johnson, B. Cohen, Kan Zhang, Srikanth Samavedam, G. Xu, T. Xuan, Unoh Kwon, C. Meng, Katsunori Onishi, Y. Shi, C. Huang, R. Coleman, Manfred Eller, Shreesh Narasimha, B. Kannan, J. Yang, Vivek Joshi, W. Ma, Christopher D. Sheraw, A. K. M. Mahalingam, Craig Child, E. Woodard, Tao Chu, Y. Jin, D. K. Sohn, Hasan M. Nayfeh, Mary Claire Silvestre, M. Lingalugari, G. Biery, Tian Shen, Carl J. Radens, E. Kaste, C-H. Lin, K. Han, K. Anil, Ankur Arya, Mehta Jaladhi, Jia Zeng, S.L. Liew, Michael V. Aquilino, M. Yu, M. Chen, Rohit Pal, E. Maciejewski, Stephan Grunow, Robert Fox, Rinus T. P. Lee
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We present a fully integrated 7nm CMOS platform featuring a 3rd generation finFET architecture, SAQP for fin formation, and SADP for BEOL metallization. This technology reflects an improvement of 2.8X routed logic density and >40% performance over th
Autor:
Shafaat Ahmed, Ketan Shah, Craig Child, Stephan Grunow, Dinesh Koli, Anbu Selvam Km Mahalingam, Adam da Silva, Tien-Jen Cheng, Mukta Sharma, Teng-Yin Lin
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Electroplating for the sub-50 nm pitch back-end-of-line (BEOL) interconnect metallization has become increasingly challenging mostly because of marginal seed coverage, inadequate plating process and/or chemistry, the limitation of scaling the barrier
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
Device scaling leads to tough challenges not only in patterning, but also in device performance due to scaled contact area, smaller stressors, and increased parasites capacitance. There is immediate need to implement low k spacers. Low-k materials, h
Autor:
Christine Bunke, Mahmoud Khojasteh, James J. Steffes, Colin Goyette, Naftali E. Lustig, Stephan Grunow, Steven E. Molis, M. Zaitz, Leo Tai, Wei-Tsu Tseng, David Steber, Michael Kennett, Laertis Economikos, Adam Ticknor, Praneetha Poloju, Elliott Rill, Michael P. Chudzik, Vamsi Devarapalli, Connie Truong
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 26:493-499
A “hybrid” post Cu CMP cleaning process that combines acidic and basic clean in sequence is developed and implemented. The new process demonstrates the strengths of both acidic and basic cleans and achieves a more than 60% reduction in CMP defect
Autor:
Weihao Weng, Stephan Grunow, Richard A. Wachnik, Xin Miao, Siddarth A. Krishnan, Ruqiang Bao, Xiuling Li, Keith Kwong Hon Wong, Vijay Narayanan, Werner A. Rausch, Unoh Kwon
Publikováno v:
IEEE Electron Device Letters. 36:384-386
Gate resistance, middle of line resistance, and back end of line resistance in modern metal-gate CMOS increase drastically as the dimensions of the gates, interconnects and vias scale down close to or below the bulk electron mean free paths (MFPs) of
Autor:
Siddarth A. Krishnan, Patrick W. DeHaven, Vijay Narayanan, John Bruley, Ruqiang Bao, Weike Wang, Unoh Kwon, Zhengwen Li, Chung-Hsun Lin, Brian J. Greene, Stephan Grunow, Rama Divakaruni, Keith Kwong Hon Wong, Kai Zhao, Sungjae Lee
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
In this paper, we develop a multiplicative model to simulate the tungsten (W) film resistivity and gate resistance for replacement metal gate (RMG) with W electrode. Our multiplicative model predicts that TiN fill offers the lower gate resistance tha
Autor:
Sanjay Mehta, Haifeng Sheng, Rishikesh Krishnan, Bala Haran, Tao Han, Marc Berardi, Zeynel Bayndir, Brett Yatzor, Jinping Liu, Joseph Shepard, Stephan Grunow
Publikováno v:
ECS Meeting Abstracts. :1183-1183
As device dimensions scale, defect-free, robust gap filling in high aspect ratio structures such as STI and inter-gate spaces becomes increasingly challenging. This is due to very high aspect ratio (AR) of gap fill structure (AR > 7:1), shrinking CDs
Publikováno v:
ECS Transactions. 3:139-146
Electromigration in 70 nm wide Cu interconnections has been investigated for the sample temperatures from 213oC to 300oC. The effect of atomic layer or physical vapor deposited TaNx and physical vapor deposited Ta liner layers in Cu Damascene lines o
Publikováno v:
Journal of Electronic Materials. 30:1602-1608
Electrochemical studies are designed to identify processes that provide adequate nucleation and thin film growth directly on ultrathin, air-exposed physical vapor deposition (PVD)-tungsten nitride diffusion barriers. In this study, it is shown that v