Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Stephan Beckx"'
Autor:
Mikhail R. Baklanov, Philip Lyons, Karen Maex, Denis Shamiryan, Werner Boullart, Stephan Beckx
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 300:111-116
Porous films are used nowadays as dielectrics with low dielectric constant (so-called low-k dielectrics). Knowing the porous structure of such films is important for successful integration in the semiconductor manufacturing technology. We developed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f894c24e39ed257f8f69699be917ab85
https://doi.org/10.1016/j.colsurfa.2006.10.055
https://doi.org/10.1016/j.colsurfa.2006.10.055
Autor:
Johan Vertommen, Stephan Beckx, V. Paraschiv, B. Coenegrachts, Serge Biesemans, K. Henson, S. Degendt, Patrick Jaenen, S. Vanhaelemeersch, S. Locorotondo, M. Demand, Denis Shamiryan, Werner Boullart, Martine Claes
Publikováno v:
Microelectronics Reliability. 45:1007-1011
We report on gate patterning development for the 45 nm node and beyond. Both poly-Si and different metal gates in combination with medium- k and high- k dielectrics have been defined. Source/drain silicon recess has been characterized for different s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::108e65e8b0860190dd7efdce10c52439
https://doi.org/10.1016/j.microrel.2004.11.005
https://doi.org/10.1016/j.microrel.2004.11.005
Autor:
Stephan Beckx, Harald Kraus, James Snow, M. Demand, Stefan De Gendt, Martine Claes, Sylvain Garaud, Werner Boullart, V. Paraschiv, Wim Deweerd, Rita Vos
Publikováno v:
Solid State Phenomena. :93-96
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88139be0f54666e00ddd8f45e145b8ac
https://doi.org/10.4028/www.scientific.net/ssp.103-104.93
https://doi.org/10.4028/www.scientific.net/ssp.103-104.93
Autor:
Karine Kenis, Paul Mertens, Guy Vereecke, Frank Holsteyns, Sophia Arnauts, Marcel Lux, Stephan Beckx, James Snow, Rita Vos, M. Lismont, P. Jaenen
Publikováno v:
Solid State Phenomena. :141-146
Cleaning of nanoparticles (< 50nm ) is becoming a major challenge in semiconductor manufacturing and the future use of traditional methods, such as megasonic cleaning, is questioned. In this paper the capability of megasonic cleaning to remove nanopa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60504834fee5c8ada0168bb65792c6ec
https://doi.org/10.4028/www.scientific.net/ssp.103-104.141
https://doi.org/10.4028/www.scientific.net/ssp.103-104.141
Autor:
Roel Baets, J. Van Campenhout, Dirk Taillaert, Vincent Wiaux, Peter Bienstman, Stephan Beckx, D. Van Thourhout, Pieter Dumon, Bert Luyssaert, Wim Bogaerts
Publikováno v:
JOURNAL OF LIGHTWAVE TECHNOLOGY
High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using complementary metal-oxide-semiconductor processing te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0412d26f4d7558d06e2304bf70d3518e
https://doi.org/10.1109/jlt.2004.834471
https://doi.org/10.1109/jlt.2004.834471
Autor:
Dirk Taillaert, Stephan Beckx, Wim Bogaerts, Pieter Dumon, D. Van Thourhout, Vincent Wiaux, J. Van Campenhout, Roel Baets, Bert Luyssaert
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications. 2:81-86
To reduce the dimensions of photonic integrated circuits, high-contrast wavelength-scale structures are needed. We developed a fabrication process for Silicon-on-insulator nanophotonics, based on standard CMOS processing techniques with deep UV litho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a8b573606410ded4aa6bdeb6c3a9541
https://doi.org/10.1016/j.photonics.2004.07.002
https://doi.org/10.1016/j.photonics.2004.07.002
Autor:
Dirk Taillaert, Roel Baets, Peter Bienstman, Stephan Beckx, Vincent Wiaux, Bert Luyssaert, Wim Bogaerts
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 8:928-934
We demonstrate wavelength-scale photonic nanostructures, including photonic crystals, fabricated in silicon-on-insulator using deep ultraviolet (UV) lithography. We discuss the mass-manufacturing capabilities of deep UV lithography compared to e-beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99f54a5f5b9772c8bce4c49dbdd1cd18
https://doi.org/10.1109/jstqe.2002.800845
https://doi.org/10.1109/jstqe.2002.800845
Autor:
Javier Martí, Johan Wouters, Pablo Sanchis, Roeland Baets, Stephan Beckx, Pieter Dumon, Vincent Wiaux, Dirk Taillaert, Wim Bogaerts, Jaime Lora García
Publikováno v:
IEEE Photonics Technology Letters. 16:2272-2274
The experimental demonstration of a high efficiency coupling technique based on setting a single defect within a photonic crystal (PhC) taper is reported. The samples were fabricated on a Silicon-on-insulator substrate and a 3-/spl mu/m-wide ridge wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee8839299704fe2e01bce4acb9485364
https://doi.org/10.1109/lpt.2004.833915
https://doi.org/10.1109/lpt.2004.833915
Autor:
Wim Bogaerts, Peter Bienstman, Pieter Dumon, J. Van Campenhout, D. Van Thourhout, Dirk Taillaert, Roel Baets, Bert Luyssaert, Johan Wouters, Stephan Beckx, Vincent Wiaux
Publikováno v:
IEEE Photonics Technology Letters. 16:1328-1330
We demonstrate single-mode photonic wires in silicon-on-insulator with propagation loss as low as 2.4 dB/cm, fabricated with deep ultraviolet lithography and dry etching. We have also made compact racetrack and ring resonators functioning as add-drop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79dd92255b9a8307a3249bf014f3f694
https://doi.org/10.1109/lpt.2004.826025
https://doi.org/10.1109/lpt.2004.826025
Autor:
Ray Duffy, Gerben Doornbos, H. Roberts, Liesbeth Witters, Annelies Delabie, Andriy Hikavyy, Monja Kaiser, R.J.R. Lander, Sofie Mertens, Serge Biesemans, G. Curatola, R. G. R. Weemaes, Rita Rooyackers, Georgios Vellianitis, Stephan Beckx, Li-Shyue Lai, Malgorzata Jurczak, C. Torregiani, Frederik Leys, C. Jonville, Bartek Pawlak, F.C. Voogt, T. Vandeweyer, D. Donnet, Nadine Collaert, C. Delvaux, M.J.H. van Dal, J. Petty, Marc Demand
Publikováno v:
2007 IEEE International Electron Devices Meeting.
Excellent performance (995 muA/mum at Ioff=94 n A/mum and Vdd=lV) and short channel effect control are achieved for tall, narrow FinFETs without mobility enhancement. Near-ideal fin/gate profiles are achieved with standard 193 nm immersion lithograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5967a30f3976ce16484408c584f36d01
https://doi.org/10.1109/iedm.2007.4419037
https://doi.org/10.1109/iedm.2007.4419037