Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Steigerwald, Thomas"'
Autor:
Kimmel, A.-C.L., Malkowski, Thomas F., Griffiths, Steven, Hertweck, Benjamin, Steigerwald, Thomas G., Freund, Lisa P., Neumeier, Steffen, Göken, Mathias, Speck, James S., Schluecker, Eberhard
Publikováno v:
In Journal of Crystal Growth 15 September 2018 498:289-300
Autor:
Steigerwald, Thomas G., Balouschek, Johannes, Hertweck, Benjamin, Kimmel, Anna-Carina L., Alt, Nicolas S.A., Schluecker, Eberhard
Publikováno v:
In The Journal of Supercritical Fluids April 2018 134:96-105
Autor:
Schimmel, Saskia, Koch, Martina, Macher, Philipp, Kimmel, Anna-Carina L., Steigerwald, Thomas G., Alt, Nicolas S.A., Schlücker, Eberhard, Wellmann, Peter
Publikováno v:
In Journal of Crystal Growth 1 December 2017 479:59-66
Autor:
Schimmel, Saskia, Künecke, Ulrike, Meisel, Magnus, Hertweck, Benjamin, Steigerwald, Thomas G., Nebel, Christoph, Alt, Nicolas S.A., Schlücker, Eberhard, Wellmann, Peter
Publikováno v:
In Journal of Crystal Growth 15 December 2016 456:33-42
Autor:
Schimmel, Saskia, Lindner, Michael, Steigerwald, Thomas G., Hertweck, Benjamin, Richter, Theresia M.M., Künecke, Ulrike, Alt, Nicolas S.A., Niewa, Rainer, Schlücker, Eberhard, Wellmann, Peter J.
Publikováno v:
In Journal of Crystal Growth 15 May 2015 418:64-69
Autor:
Hertweck, Benjamin, Schimmel, Saskia, Steigerwald, Thomas G., Alt, Nicolas S.A., Wellmann, Peter J., Schluecker, Eberhard
Publikováno v:
In The Journal of Supercritical Fluids April 2015 99:76-87
Publikováno v:
In The Journal of Supercritical Fluids November 2014 95:158-166
Publikováno v:
In Journal of Crystal Growth 1 October 2014 403:59-65
Autor:
Früh, Barbara, Becker, Paul, Deutschländer, Thomas, Hessel, Johann-Dirk, Kossmann, Meinolf, Mieskes, Ingrid, Namyslo, Joachim, Roos, Marita, Sievers, Uwe, Steigerwald, Thomas, Turau, Heidelore, Wienert, Uwe
Publikováno v:
Journal of Applied Meteorology and Climatology, 2011 Jan 01. 50(1), 167-184.
Externí odkaz:
https://www.jstor.org/stable/26174012
Autor:
Schimmel, Saskia, Kobelt, Ines, Heinlein, Lukas, Kimmel, Anna-Carina L., Steigerwald, Thomas G., Schlücker, Eberhard, Wellmann, Peter
Publikováno v:
Crystals, Vol 10, Iss 723, p 723 (2020)
Crystals
Volume 10
Issue 9
Crystals
Volume 10
Issue 9
A variety of functional nitride materials, including the important wide bandgap semiconductor GaN, can be crystallized in exceptionally good structural quality by the ammonothermal method. However, the further development of this method is hindered b