Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Steffi Lenk"'
Publikováno v:
Journal of Crystal Growth. 353:39-46
We present detailed results about the molecular beam epitaxy (MBE) growth of GaAs nanowires (NWs) on GaAs (111)B substrates prepared for the growth by a new method using hydrogen silsesquioxane (HSQ). Before the growth, HSQ is converted to SiOx by th
Autor:
Stephan Wirths, Hilde Hardtdegen, Mihail Ion Lepsa, Detlev Grützmacher, Martina von der Ahe, Steffi Lenk, Thomas Grap, Zi-An Li, Thomas Schäpers, Thomas E. Weirich, Werner Prost, Önder Gül, K. Sladek, A. Winden, Andrey Lysov, Hans Lüth, Franz-Josef Tegude, K. Weis, Christian Blömers
Publikováno v:
physica status solidi c. 9:230-234
The conductivity and crystal structure of nominally undoped InAs nanowires deposited by three different methods – 1. selective area metal organic vapor phase epitaxy (SA MOVPE), 2. gold assisted vapor liquid solid (VLS) MOVPE and 3. extrinsic catal
Autor:
Alexandre Kisner, Andreas Offenhäusser, Ulrich Simon, Enrique Fernández, Yulia Mourzina, Dirk Mayer, Steffi Lenk, Marc Heggen
Publikováno v:
Chemistry - A European Journal. 17:9503-9507
The fabrication of ultrathin single-crystal Au nanowires with high aspect ratio and that are stable in air is challenging. Recently, a simple wet-chemical approach using oleylamine has been reported for the synthesis of Au nanowires with micrometer l
Publikováno v:
The Journal of Physical Chemistry C. 113:20143-20147
Little is known about the chemical equilibrium formed between the micellar complex of oleylamine and aurous halide during the synthesis of Au nanoparticles employing an Au(I) precursor. In this paper, we determine for the first time the stability con
Autor:
K. Weis, Thomas Schaepers, Martina Luysberg, Detlev Gruetzmacher, Stephan Wirths, Steffi Lenk, Andreas Penz, K. Sladek, Shima Alagha, Masashi Akabori, Hilde Hardtdegen, Hans Lueth, Christian Volk
Publikováno v:
Scopus-Elsevier
The influence of Si-doping on the growth and material characteristics of InAs nanowires deposited by metal-organic vapor phase epitaxy (MOVPE) was investigated. It was observed that above a certain partial pressure ratio, doping has an influence on t