Carrier multiplication in silicon nanocrystals: ab initio results

Autor: Ivan Marri, Marco Govoni, Stefano Ossicini

Publikováno v: Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 343-352 (2015)

One of the most important goals in the field of renewable energy is the development of original solar cell schemes employing new materials to overcome the performance limitations of traditional solar cell devices. Among such innovative materials, nan

Externí odkaz: https://doaj.org/article/05dcb2d863e84b68b20bf680288be2fa

Photonic Properties of Silicon-Based Materials

Autor: Leonid Khriachtchev, Stefano Ossicini, Fabio Iacona, Fabrice Gourbilleau

Publikováno v: International Journal of Photoenergy, Vol 2012 (2012)

Externí odkaz: https://doaj.org/article/670ef580756a482dbfc6b1a3cb84ac9b

Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures

Autor: Michele Amato, Stefano Ossicini, Daniele Varsano, Matteo Bertocchi, Ivan Marri, Andrea Ferretti

Publikováno v: PCCP. Physical chemistry chemical physics
22 (2020): 25593–25605. doi:10.1039/d0cp04013d
info:cnr-pdr/source/autori:Marri, Ivan; Amato, Michele; Bertocchi, Matteo; Ferretti, Andrea; Varsano, Daniele; Ossicini, Stefano/titolo:Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures/doi:10.1039%2Fd0cp04013d/rivista:PCCP. Physical chemistry chemical physics (Print)/anno:2020/pagina_da:25593/pagina_a:25605/intervallo_pagine:25593–25605/volume:22
Physical Chemistry Chemical Physics

We combine density functional theory and many body perturbation theory to investigate the electronic properties of Si(100) and Ge(100) surfaces terminated with halogen atoms (-I, -Br, -Cl, -F) and other chemical functionalizations (-H, -OH, -CH3) add

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ef3faf1ddc24c5e6c9f09152993fd8b
https://doi.org/10.1039/d0cp04013d

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Autor: Riccardo Rurali, Enric Canadell, Maurizia Palummo, Michele Amato, Stefano Ossicini, Ivan Marri

Publikováno v: Faraday discussions (Online) 222 (2020): 217–239. doi:10.1039/c9fd00085b
info:cnr-pdr/source/autori:Ossicini S.; Marri I.; Amato M.; Palummo M.; Canadell E.; Rurali R./titolo:Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase/doi:10.1039%2Fc9fd00085b/rivista:Faraday discussions (Online)/anno:2020/pagina_da:217/pagina_a:239/intervallo_pagine:217–239/volume:222
Digital.CSIC. Repositorio Institucional del CSIC
instname

Silicon nanocrystals and nanowires have been extensively studied because of their novel properties and their applications in electronic, optoelectronic, photovoltaic, thermoelectric and biological devices. Here we discuss results from ab initio calcu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fee069605c7308bacec89f341767cc73
http://www.cnr.it/prodotto/i/431267

Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires

Autor: Michele Amato, Stefano Ossicini, Riccardo Rurali, Enric Canadell

Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano letters (Online) 19 (2019): 866–876. doi:10.1021/acs.nanolett.8b04083
info:cnr-pdr/source/autori:Amato M.; Ossicini S.; Canadell E.; Rurali R./titolo:Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires/doi:10.1021%2Facs.nanolett.8b04083/rivista:Nano letters (Online)/anno:2019/pagina_da:866/pagina_a:876/intervallo_pagine:866–876/volume:19

We studied the physics of common p- and ntype dopants in hexagonal-diamond Si, a Si polymorph that can be synthesized in nanowire geometry without the need of extreme pressure conditions, by means of first-principles electronic structure calculations

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28dbedc211cbb6e9b8828a97af9cbcb0
http://hdl.handle.net/10261/177937