Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Stefano Dalcanale"'
Autor:
Taylor Moule, Stefano Dalcanale, Akhil S. Kumar, Michael J. Uren, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Martin Kuball
Publikováno v:
IEEE Transactions on Electron Devices. 69:75-81
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::263f97d899fa99bfac80064f27acfb6e
https://doi.org/10.1109/ted.2021.3130861
https://doi.org/10.1109/ted.2021.3130861
Autor:
Ken Nagamatsu, Josephine B. Chang, Martin Kuball, Stefano Dalcanale, Michael J. Uren, Justin Parke, Robert S. Howell
Publikováno v:
IEEE Transactions on Electron Devices. 68:2220-2225
We report a novel noise analysis for the leakage current during time-dependent dielectric degradation under bias stress, illustrated using AlGaN/GaN superlattice castellated field-effect transistors (SLCFETs). Gate step stress is a standard approach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8e13663528d6e95f0088cc2813729b5
https://doi.org/10.1109/ted.2021.3064793
https://doi.org/10.1109/ted.2021.3064793
Publikováno v:
IEEE Transactions on Electron Devices. 67:869-874
In this article, we investigate the impact of hard-switching on the dynamic ON-resistance ( ${R}_{ \mathrm{ ON}}$ ) in the AlGaN/GaN high-electron mobility transistors (HEMTs). The pulsed measurements were taken on a set of GaN-on-Si wafers, showing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2014ecf92045e5c9d35a1fa90ed38d1f
https://doi.org/10.1109/ted.2020.2968212
https://doi.org/10.1109/ted.2020.2968212
Autor:
Manikant Singh, Michael J. Uren, James W Pomeroy, Callum Middleton, Stefano Dalcanale, S. Yamakoshi, Masataka Higashiwaki, Kohei Sasaki, Martin Kuball, Man Hoi Wong, Akito Kuramata
Publikováno v:
IEEE Electron Device Letters. 40:189-192
$\beta $ -Ga2O3 is an attractive material for high-voltage applications and has the potential for monolithically integrated RF devices. A combination of Raman nano-particle thermometry measurement and thermal simulation has been used to measure the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15372e135567ddcc561a415c1cf30699
https://doi.org/10.1109/led.2018.2887278
https://doi.org/10.1109/led.2018.2887278
Autor:
Martin Kuball, James W Pomeroy, Mark Gajda, Serge Karboyan, Feiyuan Yang, Stefano Dalcanale, Michael J. Uren
Publikováno v:
Yang, F, Uren, M J, Gajda, M, Dalcanale, S, Pomeroy, J W & Kuball, M H H 2021, ' Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation ', Semiconductor Science and Technology, vol. 36, no. 9, 095024 . https://doi.org/10.1088/1361-6641/ac16c3
In this paper, we investigate the charge trapping in power AlGaN/GaN high electron mobility transistors which occurs in ON-state operation (V DS = 40 V, V GS = 0 V, I DS = 0.18 A mm−1). By analysing the dynamic ON-resistance (R ON) after OFF-state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::982f99a68e069496bfbf4258342c455a
https://doi.org/10.1088/1361-6641/ac16c3
https://doi.org/10.1088/1361-6641/ac16c3
Autor:
Peter Moens, Stefano Dalcanale, A. Banerjee, Enrico Zanoni, Isabella Rossetto, Gaudenzio Meneghesso, Alaleh Tajalli, Matteo Meneghini, C. De Santi
Publikováno v:
IEEE Transactions on Electron Devices
This paper reports on the impact of soft- and hard-switching conditions on the dynamic ON-resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special double pulse setup, which controls the overlapping of the drain an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c52c628cd0fc2ce9e07108297405a91
https://doi.org/10.1109/ted.2017.2728785
https://doi.org/10.1109/ted.2017.2728785
Autor:
Kevin Leedy, Taylor Moule, Antonio Crespo, Neil Moser, Andrew J. Green, Elisha J M Mercado, Miles Lindquist, Gregg Jessen, Andreas Popp, James W Pomeroy, Martin Kuball, Nicholas Blumenschein, Nicholas C. Miller, Günter Wagner, Eric R. Heller, Tania Paskova, John F. Muth, Stefano Dalcanale, Kelson D. Chabak, Manikant Singh
Publikováno v:
Blumenschein, N A, Moser, N A, Heller, E R, Miller, N C, Green, A J, Popp, A, Crespo, A, Leedy, K, Lindquist, M, Moule, T, Dalcanale, S, Mercado, E, Singh, M, Pomeroy, J W, Kuball, M, Wagner, G, Paskova, T, Muth, J F, Chabak, K D & Jessen, G H 2019, ' Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography ', IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 204-211 . https://doi.org/10.1109/TED.2019.2951502
$\beta $ -Ga2O3 thin-channel MOSFETs were evaluated using both dc and pulsed ${I}$ – ${V}$ measurements. The reported pulsed ${I}$ – ${V}$ technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68b55b15111ee50ee9c15d443a087f4e
https://research-information.bris.ac.uk/ws/files/251595172/Self_Heating_Characterization_of_Ga2O3_Thin_Channel_MOSFETs_by_Pulsed_I_V_and_Raman_Nanothermography_2_.pdf
https://research-information.bris.ac.uk/ws/files/251595172/Self_Heating_Characterization_of_Ga2O3_Thin_Channel_MOSFETs_by_Pulsed_I_V_and_Raman_Nanothermography_2_.pdf
Autor:
Robert S. Howell, Michael J. Uren, Justin Parke, Shalini Gupta, James W Pomeroy, Ken Nagamatsu, Stefano Dalcanale, Josephine B. Chang, Sarat Saluru, Callum Middleton, Martin Kuball, Ishan Wathuthanthri
Publikováno v:
Middleton, C, Dalcanale, S, Uren, M, Pomeroy, J, Uren, M J, Chang, J, Parke, J, Wathuthanthri, I, Nagamatsu, K, Salaru, S & Kuball, M 2019, ' Thermal transport in Superlattice Castellated Field Effect Transistors ', IEEE Electron Device Letters, vol. 40, no. 9, pp. 1374-1377 . https://doi.org/10.1109/LED.2019.2929424
Heat extraction from novel GaN/AlGaN superlattice castellated field effect transistors developed as an RF switch is studied. The device thermal resistance was determined as 19.1 ± 0.7 K/(W/mm) from a combination of Raman thermographymeasurements, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6c44c20c8e9b707902269301b1475a7
https://research-information.bris.ac.uk/ws/files/204211531/Thermal_Transport_in_Superlattice_Castellated_Field_Effect_Transistors.pdf
https://research-information.bris.ac.uk/ws/files/204211531/Thermal_Transport_in_Superlattice_Castellated_Field_Effect_Transistors.pdf
Autor:
Enrico Zanoni, Carlo De Santi, Oliver Hilt, Gaudenzio Meneghesso, Isabella Rossetto, Joachim Wuerfl, Eldad Bahat-Treidel, Stefano Dalcanale, Matteo Meneghini
Publikováno v:
IEEE Transactions on Electron Devices. 63:2334-2339
This paper reports an experimental demonstration of the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate stress. By means of combined dc, optical analysis, and 2-D simulations,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e396a03d25a2244db59664533ee90bca
https://doi.org/10.1109/ted.2016.2553721
https://doi.org/10.1109/ted.2016.2553721
Autor:
Dionyz Pogany, Oliver Hilt, Gaudenzio Meneghesso, Riccardo Silvestri, Eldad Bahat-Treidel, Mattia Capriotti, Clément Fleury, Joachim Würfl, Matteo Meneghini, Enrico Zanoni, Isabella Rossetto, Stefano Dalcanale, Frank Brunner, Gottfried Strasser, Arne Knauer
Publikováno v:
ResearcherID
This paper reports an analysis of the degradation mechanisms of GaN-based normally-off transistors submitted to off-state stress, forward-gate operation and electrostatic discharges. The analysis was carried out on transistors with p-type gate, rated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::054213584be70a3b16a24b574d47e906
https://doi.org/10.1016/j.microrel.2015.11.026
https://doi.org/10.1016/j.microrel.2015.11.026