Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Stefano Aresu"'
Autor:
Holger Poehle, Roberta Stradiotto, Wolfgang Gustin, Marc Strasser, Stefano Aresu, Katja Puschkarsky
Publikováno v:
2018 International Integrated Reliability Workshop (IIRW).
For the reliability assessment of HV depletion NMOS devices, the relevant off-state degradation mechanisms are discussed and quantified on the example of a transistor in a 130 nm power technology. It can be shown that depending on its construction, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::400cd1a1c523f180746d01ffbb785ec3
https://doi.org/10.1109/iirw.2018.8727103
https://doi.org/10.1109/iirw.2018.8727103
Publikováno v:
Microelectronics Reliability. 54:1883-1886
Hot carrier (HC) injection, inducing drain and gate leakage current increase in 5 nm oxide p-channel LDMOS transistors, is investigated. Devices with two different drain implants are studied. At low gate voltage ( V GS ) and high drain voltage ( V DS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4c2312986a681941ec8b6e55c602b47
https://doi.org/10.1016/j.microrel.2014.07.048
https://doi.org/10.1016/j.microrel.2014.07.048
Autor:
Hans Reisinger, K. Kölpin, Stefano Aresu, Tibor Grasser, Christian Schlunder, Wolfgang Gustin, K. Rott
Publikováno v:
Microelectronics Reliability. 52:1891-1894
The physical origin of both Negative- and Positive Bias Temperature Instability (N-/PBTI) is still unclear and under debate. We analyzed the rarely studied recovery behavior after PBTI stress in pMOSFETs and compared it with NBTI data obtained from t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9259699327a1bb0fd9c69d47c95a0ee0
https://doi.org/10.1016/j.microrel.2012.06.015
https://doi.org/10.1016/j.microrel.2012.06.015
Autor:
Tibor Grasser, Christian Schlunder, Hans Reisinger, Stefano Aresu, Andreas Martin, P.-J. Wagner, T. Huttner, Wolfgang Gustin, R.-P. Vollertsen
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 9:106-114
Negative bias temperature instability (NBTI) degradation and recovery have been investigated for 7-50-nm non-nitrided oxides and compared to thin 1.8- and 2.2-nm nitrided oxides from a dual work function technology. A wide regime of stress fields fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6a4d59a75b76ea58e52f1bc78149c9c
https://doi.org/10.1109/tdmr.2009.2021389
https://doi.org/10.1109/tdmr.2009.2021389
Publikováno v:
Microelectronics Reliability. 48:1490-1493
Experience shows that chip package interaction is a dominant cause for failures of electronic components. Optimising the technology by applying the standard temperature cycling test to detect these failures is very time consuming and not any more com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb95addc0712b220532797a7cb84a5b
https://doi.org/10.1016/j.microrel.2008.07.034
https://doi.org/10.1016/j.microrel.2008.07.034
Publikováno v:
Microelectronics Reliability. 48:1509-1512
Bipolar transistors are part of the design manuals of almost all semiconductor wafer technologies. These design library devices must be qualified and released according to the present qualification standards, e.g. AEC (automotive electronic council)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::629ac9a8eee1000759635bc0dd1dae14
https://doi.org/10.1016/j.microrel.2008.07.010
https://doi.org/10.1016/j.microrel.2008.07.010
Publikováno v:
Microelectronics Reliability. 47:1512-1516
ESD (electrostatic discharge) protection devices as part of the device pad circuitry of semiconductors are designed for a specific wafer technology and ESD withstanding voltage. After successful qualification they will be released for a usage in high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a5d9a79b0e514a4b875b7cbe0a8e26d
https://doi.org/10.1016/j.microrel.2007.07.042
https://doi.org/10.1016/j.microrel.2007.07.042
Autor:
Marc D'olieslaeger, G. Vanhoyland, Jean Manca, Stefano Aresu, Ann Swinnen, I. Haeldermans, Jan D'Haen, M. vande Ven
Publikováno v:
Advanced Functional Materials. 16:760-765
A new ordered structure of the C 60 derivative PCBM ([6-6]-phenyl C 61 -butyric acid methyl ester) is obtained in thin films based on the blend PCRM:regioregular P3HT (poly(3-hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b5de24684fec813912fa1db30ae8947
https://doi.org/10.1002/adfm.200500812
https://doi.org/10.1002/adfm.200500812
Publikováno v:
Microelectronic Engineering. 80:182-185
A model is proposed and validated for the degradation mechanisms occurring in ultra-thin SiO2 at real operation conditions, based on high-resolution, high-speed in-situ measurements. This state-of-the-art set-up proves that oxide degradation still oc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9a20f3bf202594d1372519e8d725ea2
https://doi.org/10.1016/j.mee.2005.04.065
https://doi.org/10.1016/j.mee.2005.04.065
Autor:
Jean Manca, L. De Schepper, Stefano Aresu, Robin Degraeve, Jan D'Haen, Ben Kaczer, Gilbert Knuyt, W. De Ceuninck, Marc D'olieslaeger, J. Mertens
Publikováno v:
Microelectronics Reliability. 43:1483-1488
IMOMEC, IMEC Div, B-3590 Diepenbeek, Belgium. IMEC, B-3001 Heverlee, Belgium. Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium.Aresu, S, IMOMEC, IMEC Div, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de57d02822e68ff55ed3259c94dc97d3
https://doi.org/10.1016/s0026-2714(03)00263-4
https://doi.org/10.1016/s0026-2714(03)00263-4