Zobrazeno 1 - 10
of 237
pro vyhledávání: '"Stefano, Sanguinetti"'
Autor:
Luca Anzi, Artur Tuktamyshev, Alexey Fedorov, Amaia Zurutuza, Stefano Sanguinetti, Roman Sordan
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-7 (2022)
Abstract The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage w
Externí odkaz:
https://doaj.org/article/db0ab6eeffef461aa5b9723de77a698f
Autor:
Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Stefano Vichi, Riccardo Tambone, Shiro Tsukamoto, Stefano Sanguinetti
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract We investigated the nucleation of Ga droplets on singular GaAs(111)A substrates in the view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small critical cluster size of 1–2 atoms characterizes the dropl
Externí odkaz:
https://doaj.org/article/e373aff5a1c44ae696f1dbad66773071
Autor:
Mani Azadmand, Stefano Vichi, Federico Guido Cesura, Sergio Bietti, Daniel Chrastina, Emiliano Bonera, Giovanni Maria Vanacore, Shiro Tsukamoto, Stefano Sanguinetti
Publikováno v:
Nanomaterials, Vol 12, Iss 21, p 3887 (2022)
We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and compositional analysis. T
Externí odkaz:
https://doaj.org/article/7be522391de84c56b692380126929fc8
Autor:
Artur Tuktamyshev, Stefano Vichi, Federico Guido Cesura, Alexey Fedorov, Giuseppe Carminati, Davide Lambardi, Jacopo Pedrini, Elisa Vitiello, Fabio Pezzoli, Sergio Bietti, Stefano Sanguinetti
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3571 (2022)
We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented
Externí odkaz:
https://doaj.org/article/cda17a21dfca4d94a19e6050852c34e4
Autor:
Andrea Scaccabarozzi, Stefano Vichi, Sergio Bietti, Federico Cesura, Timo Aho, Mircea Guina, Federica Cappelluti, Maurizio Acciarri and Stefano Sanguinetti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::8a016012c5870778b8bb469980e5a57e
https://hdl.handle.net/10281/422140
https://hdl.handle.net/10281/422140
Autor:
Geoffrey Pirard, Francesco Basso Basset, Sergio Bietti, Stefano Sanguinetti, Rinaldo Trotta, Gabriel Bester
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f47fb121f6d8b5a3024662a040df49b
https://doi.org/10.1103/physrevb.107.205417
https://doi.org/10.1103/physrevb.107.205417
Autor:
Dimosthenis Toliopoulos, Alexey Fedorov, Sergio Bietti, Monica Bollani, Emiliano Bonera, Andrea Ballabio, Giovanni Isella, Mohammed Bouabdellaoui, Marco Abbarchi, Shiro Tsukamoto, Stefano Sanguinetti
Publikováno v:
Nanomaterials, Vol 10, Iss 12, p 2542 (2020)
We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO2/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron micros
Externí odkaz:
https://doaj.org/article/5b0deb3491004752b555d9ee2b0d1391