Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Stefanakis, Dionyssios"'
Autor:
Zekentes, Konstantinos, Vassilevski, Konstantin, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Peyre, Herve, Makris, Nikolaos, Bucher, Matthias, Schmid, Patrick, Stefanakis, Dionyssios, Tassis, Dimitrios
Publikováno v:
Materials Science Forum; May 2016, Vol. 858 Issue: 1 p913-916, 4p
Autor:
Zekentes, Konstantinos, Vassilevski Konstantin V., Stavrinidis Antonis, Konstantinidis Georgios, Kayambaki Maria, Vamvoukakis Konstantinos, Vassakis Emmanouil, Peyré Hervé, Makris Nikolaos, Bucher Matthias, Schmid Patrick, Stefanakis Dionyssios, Tassis, Dimitrios
Summarization: Purely vertical 4H-SiC JFETs have been modeled by using three different approaches: the analytical model, the finite element model and the compact model. The results of the modelling have been compared with experimental results obtaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4037::6e5d5055871c45079c733de32ecdbbf6
http://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242
http://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242
