Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Stefan Petzold"'
Autor:
Alexander Zintler, Robert Eilhardt, Stefan Petzold, Sankaramangalam Ulhas Sharath, Enrico Bruder, Nico Kaiser, Lambert Alff, Leopoldo Molina-Luna
Publikováno v:
ACS Omega, Vol 7, Iss 2, Pp 2041-2048 (2022)
Externí odkaz:
https://doaj.org/article/4544d395f30543679ab62e6eadb9c068
Autor:
Robert Winkler, Alexander Zintler, Stefan Petzold, Eszter Piros, Nico Kaiser, Tobias Vogel, Déspina Nasiou, Keith P. McKenna, Leopoldo Molina‐Luna, Lambert Alff
Publikováno v:
Advanced Science, Vol 9, Iss 33, Pp n/a-n/a (2022)
Abstract Resistive random‐access memories are promising candidates for novel computer architectures such as in‐memory computing, multilevel data storage, and neuromorphics. Their working principle is based on electrically stimulated materials cha
Externí odkaz:
https://doaj.org/article/aae7e74c78ff4b93b6b77cf8d0629c7b
Autor:
Gang Niu, Pauline Calka, Peng Huang, Sankaramangalam Ulhas Sharath, Stefan Petzold, Andrei Gloskovskii, Karol Fröhlich, Yudi Zhao, Jinfeng Kang, Markus Andreas Schubert, Florian Bärwolf, Wei Ren, Zuo-Guang Ye, Eduardo Perez, Christian Wenger, Lambert Alff, Thomas Schroeder
Publikováno v:
Materials Research Letters, Vol 7, Iss 3, Pp 117-123 (2019)
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the mic
Externí odkaz:
https://doaj.org/article/bfa1280cf60d4b379358b352d3ab6ba9
Autor:
Nico Kaiser, Young-Joon Song, Tobias Vogel, Eszter Piros, Taewook Kim, Philipp Schreyer, Stefan Petzold, Roser Valentí, Lambert Alff
Publikováno v:
ACS Applied Electronic Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f932392648c72df69eb4a3a57f38bb0
Autor:
Maximilian Lederer, Tobias Vogel, Thomas Kämpfe, Nico Kaiser, Eszter Piros, Ricardo Olivo, Tarek Ali, Stefan Petzold, David Lehninger, Christina Trautmann, Lambert Alff, Konrad Seidel
Publikováno v:
Journal of Applied Physics 132, 064102 (2022)
Journal of applied physics 132(6), 064102 (2022). doi:10.1063/5.0098953
Journal of applied physics 132(6), 064102 (2022). doi:10.1063/5.0098953
Journal of applied physics 132(6), 064102 (2022). doi:10.1063/5.0098953
Published by American Inst. of Physics, Melville, NY
Published by American Inst. of Physics, Melville, NY
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91e725254d94f0de6a9ced7fc1a584b4
Autor:
Erwin Hildebrandt, S. U. Sharath, Lambert Alff, Stefan Petzold, Jonas Lemke, Christina Trautmann
Publikováno v:
IEEE Transactions on Nuclear Science
Hafnium oxide-based resistive random access memory (RRAM) ( ${\mathrm {TiN/HfO}}_{2-{x}}$ /Pt/Au) stacks were irradiated with 1.1-GeV Au ions with fluences between 1010 and 1012 ions/cm2 and evaluated regarding pristine resistance, forming voltage, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d44cd88a77b204a6ae201bfcd4e156d4
https://doi.org/10.1109/tns.2019.2908637
https://doi.org/10.1109/tns.2019.2908637
Autor:
Stefan Petzold, Tobias Vogel, Eszter Piros, Lambert Alff, Nicolas Guillaume, Nico Kaiser, Etienne Nowak, Christina Trautmann, Sylvain David, Christelle Charpin-Nicolle, Gauthier Lefevre, Christophe Vallée
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE transactions on nuclear science 68(8), 1542-1547 (2021). doi:10.1109/TNS.2021.3085962
IEEE transactions on nuclear science 68(8), 1542-1547 (2021). doi:10.1109/TNS.2021.3085962
IEEE transactions on nuclear science 68(8), 1542 - 1547 (2021). doi:10.1109/TNS.2021.3085962
Published by IEEE, New York, NY
Published by IEEE, New York, NY
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31ad2defa3c5d165bf55681dadfd1bc9
Autor:
Jens Müller, Nico Kaiser, S. U. Sharath, Stefan Petzold, Eszter Piros, Martin Lonsky, Leopoldo Molina-Luna, Christian Wenger, Robert Eilhardt, Tobias Vogel, Lambert Alff, Alexander Zintler
Publikováno v:
Physical Review Applied. 14
Low-frequency noise in Y2O3-based resistive random-access memory devices with analog switching is studied at intermediate resistive states and as a function of dc cycling. A universal 1/f(alpha)-type behavior is found, with a frequency exponent of al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bfd342582be6e85cc97b259af1eef34
https://doi.org/10.1103/physrevapplied.14.034029
https://doi.org/10.1103/physrevapplied.14.034029
Autor:
Tobias Vogel, Stefan Petzold, Tarek Ali, C. Trautmann, Konrad Seidel, Ricardo Olivo, David Lehninger, Maximilian Lederer, Nico Kaiser, Lambert Alff, Thomas Kampfe
Publikováno v:
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)
The novel thin-film ferroelectric material hafnium oxide has revived the interest into ferroelectric memory concepts, which is due to the fact, that it facilitates CMOS and BEoL compatible integration. A major requirement hereby is the stability of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a08c82571d1af9c6abb727f8b511ad28
https://doi.org/10.1109/ifcs-isaf41089.2020.9234942
https://doi.org/10.1109/ifcs-isaf41089.2020.9234942
Publikováno v:
Physical Review Applied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::8bfd342582be6e85cc97b259af1eef34