Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Stefan P. Svensson"'
Publikováno v:
Journal of Applied Physics. 131
Dislocations in compositionally graded virtual substrates and InAsSb epitaxial layers for long wavelength (8–12 μm) photodetectors have been investigated with high-resolution x-ray topography (XRT). By varying the imaging conditions, the propertie
Autor:
Sergey Suchalkin, Boris Laykhtman, G. Belenky, Stefan P. Svensson, Gela Kipshidze, Jhair Alzamora
Publikováno v:
Solid State Communications. 358:115010
Autor:
Gela Kipshidze, D. Donetsky, Gregory Belenky, Jinghe Liu, Kevin Kucharczyk, Stefan P. Svensson
Publikováno v:
Conference on Lasers and Electro-Optics.
We describe an nBp structure comprised of waveguide with gratings for electronic steering a 10.6-µm laser and show that a 0.06 change of the refractive index by carrier injection leads to a 3.5° steering angle.
Autor:
Jinghe Liu, Dmitri Donetski, Kevin Kucharczyk, Jingze Zhao, Gela Kipshidze, Gregory Belenky, Stefan P. Svensson
Publikováno v:
Applied Physics Letters. 120:141101
Infrared detector barrier heterostructures with strained layer superlattice (SLS) absorbers with different periods were compared. The first was a reference using a conventional barrier heterostructure with a low temperature energy gap corresponding t
Autor:
Seongphill Moon, Yuxuan Jiang, Dmitry Smirnov, David Graf, Gregory Belenky, Gela Kipshidze, Leon Shterengas, Stefan P. Svensson, Sergey Suchalkin, Maksim Ermolaev, Wendy L. Sarney, Boris Laikhtman
Publikováno v:
Nano Letters. 18:412-417
Quasiparticles with Dirac type dispersion can be observed in nearly gapless bulk semiconductors alloys where the bandgap is controlled through the material composition. We demonstrate that the Dirac dispersion can be realized in short period InAs1-xS
Autor:
Igor Žutić, Javad Shabani, William Mayer, Kaushini Wickramasinghe, Stefan P. Svensson, Joseph Yuan, Tiago Campos, Matthieu C. Dartiailh, William F. Schiela, Wendy L. Sarney, Asher C. Leff, Mehdi Hatefipour
We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df6230bf57a2f92fee8631aa66a42fca
http://arxiv.org/abs/1909.12571
http://arxiv.org/abs/1909.12571
Autor:
Gregory Belenky, Stefan P. Svensson, Zhigang Jiang, Seongphill Moon, Sergey Suchalkin, Maksim Ermolaev, Gela Kipshidze, Yuxuan Jiang, Dmitry Smirnov, Wendy L. Sarney, Tonica Valla, Mykhaylo Ozerov
A Dirac-type energy spectrum was demonstrated in gapless ultrashort-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES) measurements. The Fermi velocity value of 7.4 × 105 m/s in a gapless superlattice w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31aac1447dab97aa36100cbebd618398
http://arxiv.org/abs/1909.12293
http://arxiv.org/abs/1909.12293
Autor:
Dmitry Smirnov, Wendy L. Sarney, Stefan P. Svensson, Boris Laikhtman, Tonica Valla, Gregory Belenky, Gela Kipshidze, Maksim Ermolaev, Seongphill Moon, Sergey Suchalkin
Publikováno v:
2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual subs
Autor:
Gela Kipshidze, Sergey Suchalkin, Gregory Belenky, Stefan P. Svensson, Maksim Ermolaev, Dmitry Donetsky
Publikováno v:
Applied Physics Letters. 117:250501
Metamorphic InAs1−xSbx/InAs1−ySby strained layer superlattice (SLS) structures allow for great flexibility of engineering artificial band structures and, therefore, the design of new optical and electrical properties. By using tailored virtual su
Autor:
Alexandros Kyrtsos, Sergey Suchalkin, Stefan P. Svensson, Dmitri Donetski, Enrico Bellotti, Gregory Belenky, W. A. Beck, Wendy L. Sarney, Jinghe Liu
Publikováno v:
Semiconductor Science and Technology. 35:125001
The properties of low concentrations of Be as a p-dopant in InAsSb with a composition corresponding to absorption in the long wavelength infrared band were studied. Temperature- and magnetic field-dependent Hall effect data were analyzed with a multi