Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Stefan Nemeth"'
Publikováno v:
Communications, Vol 9, Iss 4, Pp 55-58 (2007)
This investigation was undertaken to compare the performance of grinding wheels containing newly developed "seeded gel" aluminum oxide abrasive with the wheels containing conventional monocrystalline aluminum oxide. The experiments were carried out o
Externí odkaz:
https://doaj.org/article/d7852611bdc940fbacac776f3d1099ba
Publikováno v:
IEE Proceedings - Optoelectronics. 144:295-298
Molecular beam epitaxy (MBE) has been used to grow strained multiple quantum well InAs/sub 0.9/Sb/sub 0.1/ light-emitting diodes (LEDs) lattice matched on InAs substrates. The LEDs exhibit room-temperature infrared emission at 3.4 /spl mu/m and can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5491924920f1fee593f83deff805a68
https://doi.org/10.1049/ip-opt:19971255
https://doi.org/10.1049/ip-opt:19971255
Publikováno v:
Solid State Phenomena. 55:20-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c66430958aefc6dbd9f159f913abfd8
https://doi.org/10.4028/www.scientific.net/ssp.55.20
https://doi.org/10.4028/www.scientific.net/ssp.55.20
Autor:
Stefan Nemeth, Stefan Degroote, Joachim John, Chris Van Hoof, Gustaaf Borghs, Lars Zimmermann
Publikováno v:
Applied Physics Letters. 82:2838-2840
We conducted an experimental study of back-side-illuminated InGaAs photodiodes grown on GaAs and sensitive in the short-wave infrared up to 2.4 μm. Standard metamorphic InGaAs or IR-transparent InAlAs buffers were grown by molecular-beam epitaxy. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::087123a7e4dbf84b303cc30e98766050
https://doi.org/10.1063/1.1569042
https://doi.org/10.1063/1.1569042
Autor:
Yukiharu Takeda, M Tabuchi, Stefan Nemeth, J. De Boeck, Hiro Akinaga, Masaharu Oshima, Gustaaf Borghs, Hironori Ofuchi
Publikováno v:
Applied Physics Letters. 78:2470-2472
A local structural transition in heavily Fe-doped GaN films related to the magnetic properties has been revealed by fluorescence x-ray absorption fine structure (XAFS) analysis. The structural transition is explained (or considered to be induced) by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f7c147db962b0f7dd449d7a9ad7680
https://doi.org/10.1063/1.1368184
https://doi.org/10.1063/1.1368184
Autor:
Hugo Bender, Masaharu Oshima, J. De Boeck, Stefan Nemeth, Gustaaf Borghs, Hironori Ofuchi, Hiro Akinaga, L Nistor
Publikováno v:
Applied Physics Letters. 77:4377-4379
We succeeded in growing highly Fe-doped GaN films by solid-source molecular beam epitaxy using an electron-cyclotron-resonance microwave nitrogen plasma. The substrate temperature was in the range of 380–520 °C. The samples were analyzed by x-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c80b38b685c4027cc1da9d97cbe2d111
https://doi.org/10.1063/1.1335547
https://doi.org/10.1063/1.1335547
Autor:
Chris Van Hoof, Lars Zimmermann, Joachim John, Stefan Nemeth, Patrick Merken, Thierry Colin, Stefan de Groote, Gustaaf Borghs
Publikováno v:
SPIE Proceedings.
Short wavelength infrared (SWIR) photovoltaic diode structures made of InGaAs material were grown on GaAs by means of molecular beam epitaxy. Growth quality and composition of the layers are determined by HRXRD. The electrical characterization is per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7fd42089090c8f60de46a8abb65621f
https://doi.org/10.1117/12.504519
https://doi.org/10.1117/12.504519
Publikováno v:
SPIE Proceedings.
Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3 GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In 0.8 Ga 0.2 As and GaAs the diode performance allows appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50493518a137146b469f6d783257b835
https://doi.org/10.1117/12.450563
https://doi.org/10.1117/12.450563
Autor:
Staf Borghs, Joachim John, Thierry Colin, Chris Van Hoof, Lars Zimmermann, Patrick Merken, Stefan Nemeth
Publikováno v:
Infrared Technology and Applications XXVII.
High quality extended-wavelength InGaAs (80% In) has been grown heteroepitaxially on 3'-GaAs substrates by means of Molecular Beam Epitaxy (MBE). In contrast growth on InP, sensor manufacturing on GaAs substrates can be readily scaled to 6'. An addit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e96cedcbb2d652a4606558c07419c901
https://doi.org/10.1117/12.445330
https://doi.org/10.1117/12.445330
Autor:
Martin Slaman, Chris Van Hoof, Stefan Nemeth, Martijn de Weerd, Joachim John, Patrick Merken, Staf Borghs, Lars Zimmermann
Publikováno v:
Photodetectors: Materials and Devices VI.
We report on In(80%)GaAs line scan sensors with 128 pixels on 50 micrometers pitch for use as thermo-electrically-cooled spectroscopic sensor in the short-wave infrared (1 - 2.5 micrometers ).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e43a9b8fb0607a0523aa8efa23508454
https://doi.org/10.1117/12.429396
https://doi.org/10.1117/12.429396