Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Stefan Lammers"'
Autor:
Detmar Zimmer, Kay-Peter Hoyer, Bernd Ponick, Stefan Urbanek, Mirko Schaper, Stefan Lammers, Tobias Lieneke, A. Taube
Publikováno v:
2018 IEEE Transportation Electrification Conference and Expo (ITEC).
This paper describes the design, the additive manufacturing process and the testing of a soft magnetic rotor active part and shaft region for a permanent magnet synchronous machine (PMSM). In a first step, thebest possible ferromagnetic material was
Publikováno v:
Journal of Materials Research. 29:1911-1919
The selective-laser-melting (SLM) technique is an outstanding new production technology that allows for time-efficient fabrication of highly complex components from various metals. SLM processing leads to the evolution of numerous microstructural fea
Autor:
Hans J. Schmid, Rainer Oberacker, Stefan Lammers, Guido Adam, Bernd Ponick, Michael J. Hoffmann, Francesco Quattrone, Rafael Mrozek
Publikováno v:
2016 6th International Electric Drives Production Conference (EDPC).
Additive Manufacturing (AM), also known as 3D printing, is a relatively new technology which enables the toolless production of components and entire assemblies directly from a CAD file. Today, the technology is still not widely used in industrial pr
Autor:
E. Gow, K. Maloney, Andre Sturm, Malissa J. Wood, J. DeBrosse, W. Obermeyer, C. Barwin, William J. Gallagher, Heinz Hoenigschmid, Gerhard Mueller, A.R. Sitaram, D. Willmott, Stefan Lammers, Hans-Heinrich Viehmann, Thomas M. Maffitt, C. Arndt, D. Gogl, Mark C. H. Lamorey, Yu Lu, A. Bette
Publikováno v:
IEEE Journal of Solid-State Circuits. 40:902-908
A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42/spl mu/m/sup 2/ 1-transistor 1-magnetic tun
Autor:
Stefan Lammers, Gerhard Müller, R. P. Robertazzi, W. Obermaier, William J. Gallagher, William Robert Reohr, Hans-Heinrich Viehmann, Daniel Braun, C. Arndt, D. Gogl, J. DeBrosse, A. Bette, Heinz Hoenigschmid, R.P. Havreluk, D. Casarotto
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:678-683
A 128-kb magnetic random access memory (MRAM) test chip has been fabricated utilizing, for the first time, a 0.18-/spl mu/m V/sub DD/=1.8 V logic process technology with Cu metallization. The presented design uses a 1.4-/spl mu/m/sup 2/ one-transisto
Publikováno v:
Global Biogeochemical Cycles, 9 (3). pp. 351-358.
Measurements of dissolved methane in the surface waters of the western Sea of Okhotsk are evaluated in terms of methane exchange rates and are used to assess the magnitude of seasonal variations of methane fluxes from the ocean to the atmosphere in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::263b811850ff34678054d555b5d30864
http://oceanrep.geomar.de/36/
http://oceanrep.geomar.de/36/